Datasheets
MTP10N06 by:

Power Field-Effect Transistor, 10A I(D), 60V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Details for MTP10N06 by Motorola Semiconductor Products

Overview of MTP10N06 by Motorola Semiconductor Products

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Applications Consumer Electronics Education and Research Energy and Power Systems

Price & Stock for MTP10N06

Part # Distributor Description Stock Price Buy
Bristol Electronics   4
RFQ

Part Details for MTP10N06

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MTP10N06 Part Data Attributes

MTP10N06 Motorola Semiconductor Products
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MTP10N06 Motorola Semiconductor Products Power Field-Effect Transistor, 10A I(D), 60V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MOTOROLA INC
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.28 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 100 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 75 W
Power Dissipation-Max (Abs) 75 W
Pulsed Drain Current-Max (IDM) 28 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 110 ns
Turn-on Time-Max (ton) 170 ns

Alternate Parts for MTP10N06

This table gives cross-reference parts and alternative options found for MTP10N06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTP10N06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BUZ71AL Power Field-Effect Transistor, 13A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens MTP10N06 vs BUZ71AL
MTP3055A 12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN STMicroelectronics MTP10N06 vs MTP3055A
MTP7N06 Power Field-Effect Transistor, 7A I(D), 60V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products MTP10N06 vs MTP7N06
BUZ71A 12A, 50V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC MTP10N06 vs BUZ71A
BUK452-60A TRANSISTOR 15 A, 60 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors MTP10N06 vs BUK452-60A
MTP3055E 12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC MTP10N06 vs MTP3055E
RFP15N06L Power Field-Effect Transistor, 15A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor MTP10N06 vs RFP15N06L
STP16NE06L 16A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics MTP10N06 vs STP16NE06L
2SK2175 15A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN Renesas Electronics Corporation MTP10N06 vs 2SK2175
RFP3055 Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation MTP10N06 vs RFP3055
Part Number Description Manufacturer Compare
MTP5N06 Power Field-Effect Transistor, 5A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products MTP10N06 vs MTP5N06
BUZ71A Power Field-Effect Transistor, 13A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation MTP10N06 vs BUZ71A
BUZ71AL Power Field-Effect Transistor, 13A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens MTP10N06 vs BUZ71AL
BUZ71A 13A, 50V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation MTP10N06 vs BUZ71A
2SK970 Power Field-Effect Transistor, 10A I(D), 60V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Hitachi Ltd MTP10N06 vs 2SK970
MTP3055EL 12A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC MTP10N06 vs MTP3055EL
BUZ70L Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Infineon Technologies AG MTP10N06 vs BUZ70L
BUZ71A 13A, 50V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited MTP10N06 vs BUZ71A
BUZ70 Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens MTP10N06 vs BUZ70
RFP3055LE 12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation MTP10N06 vs RFP3055LE

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