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P-Channel Enhancement Mode Field Effect Transistor -60V, -0.12A, 10Ω, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
58K2015
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Newark | P Channel Mosfet, -60V, 120Ma, Sot-23, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:120Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Onsemi NDS0610 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1135 |
|
$0.1770 / $0.3910 | Buy Now |
DISTI #
87X5920
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Newark | Mosfet Transistor, P Channel, -120 Ma, -60 V, 10 Ohm, -10 V, -1.7 V Rohs Compliant: Yes |Onsemi NDS0610 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.0490 / $0.0780 | Buy Now |
DISTI #
26M1839
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Newark | Mosfet, P, Sot-23, Transistor Polarity:P Channel, Continuous Drain Current Id:120Ma, Drain Source Voltage Vds:-60V, On Resistance Rds(On):10Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-1.7V, Power Dissipation Pd:300Mw, Rohs Compliant: Yes |Onsemi NDS0610 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$0.0720 / $0.3540 | Buy Now |
DISTI #
67R2123
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Newark | Mosfet, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:120Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V, Power Dissipation:360Mw Rohs Compliant: Yes |Onsemi NDS0610 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.0810 / $0.1410 | Buy Now |
DISTI #
NDS0610CT-ND
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DigiKey | MOSFET P-CH 60V 120MA SOT-23 Min Qty: 1 Lead time: 12 Weeks Container: Digi-ReelĀ®, Cut Tape (CT), Tape & Reel (TR) |
43353 In Stock |
|
$0.0789 / $0.3700 | Buy Now |
DISTI #
NDS0610
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Avnet Americas | Trans MOSFET P-CH 60V 0.12A 3-Pin SOT-23 T/R - Tape and Reel (Alt: NDS0610) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$0.0397 / $0.0474 | Buy Now |
DISTI #
NDS0610
|
Avnet Americas | Trans MOSFET P-CH 60V 0.12A 3-Pin SOT-23 T/R - Tape and Reel (Alt: NDS0610) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$0.0397 / $0.0474 | Buy Now |
DISTI #
NDS0610
|
Avnet Americas | Trans MOSFET P-CH 60V 0.12A 3-Pin SOT-23 T/R - Tape and Reel (Alt: NDS0610) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$0.0390 / $0.0467 | Buy Now |
DISTI #
NDS0610
|
Avnet Americas | Trans MOSFET P-CH 60V 0.12A 3-Pin SOT-23 T/R - Tape and Reel (Alt: NDS0610) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
DISTI #
58K2015
|
Avnet Americas | Trans MOSFET P-CH 60V 0.12A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 58K2015) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 4 Days Container: Ammo Pack | 1135 Partner Stock |
|
$0.1770 / $0.3910 | Buy Now |
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NDS0610
onsemi
Buy Now
Datasheet
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Compare Parts:
NDS0610
onsemi
P-Channel Enhancement Mode Field Effect Transistor -60V, -0.12A, 10Ω, 3000-REEL
|
Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Package Description | SOT-23, 3 PIN | |
Manufacturer Package Code | 318-08 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 78 Weeks, 4 Days | |
Samacsys Manufacturer | onsemi | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.12 A | |
Drain-source On Resistance-Max | 10 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 5 pF | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 0.36 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for NDS0610. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NDS0610, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
TP0610TT1 | Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, | Temic Semiconductors | NDS0610 vs TP0610TT1 |
VP0610T | Transistor, | Exar Corporation | NDS0610 vs VP0610T |
TP0610T | Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, SAME AS SOT-23, 3 PIN | Supertex Inc | NDS0610 vs TP0610T |
TP0610T | Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, | Temic Semiconductors | NDS0610 vs TP0610T |
NDS0610L99Z | Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | Fairchild Semiconductor Corporation | NDS0610 vs NDS0610L99Z |
TP0610T | Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN | Vishay Siliconix | NDS0610 vs TP0610T |
VP0610T | Transistor, | Sipex Corporation | NDS0610 vs VP0610T |
NDS0610S62Z | Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | Fairchild Semiconductor Corporation | NDS0610 vs NDS0610S62Z |
TP0610TT2 | Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, | Temic Semiconductors | NDS0610 vs TP0610TT2 |
NDS0610/D87Z | 120mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | Texas Instruments | NDS0610 vs NDS0610/D87Z |