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3.0 A, 100 V NPN Bipolar Power Transistor, 2500-REEL
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NJVMJD31CT4G-VF01
onsemi
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Datasheet
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NJVMJD31CT4G-VF01
onsemi
3.0 A, 100 V NPN Bipolar Power Transistor, 2500-REEL
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Package Description | DPAK-3/2 | |
Manufacturer Package Code | 369C | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 2017-02-10 | |
Samacsys Manufacturer | onsemi | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 3 A | |
Collector-Emitter Voltage-Max | 100 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 10 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -65 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | NPN | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 3 MHz |
This table gives cross-reference parts and alternative options found for NJVMJD31CT4G-VF01. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NJVMJD31CT4G-VF01, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
MJD31C-13 | Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 | Diodes Incorporated | NJVMJD31CT4G-VF01 vs MJD31C-13 |
MJD31C | Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3 | Fairchild Semiconductor Corporation | NJVMJD31CT4G-VF01 vs MJD31C |
MJD31CETF-SN00207 | Power Bipolar Transistor | onsemi | NJVMJD31CT4G-VF01 vs MJD31CETF-SN00207 |
MJD31C-TP | Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, ROHS COMPLIANT, PLASTIC, DPAK-3/2 | Micro Commercial Components | NJVMJD31CT4G-VF01 vs MJD31C-TP |
KSH31C | Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3 | Fairchild Semiconductor Corporation | NJVMJD31CT4G-VF01 vs KSH31C |
MJD31CT4 | 3A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC, CASE 369C, DPAK-3 | onsemi | NJVMJD31CT4G-VF01 vs MJD31CT4 |
MJD31CT4G | 3.0 A, 100 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 2500-REEL | onsemi | NJVMJD31CT4G-VF01 vs MJD31CT4G |
MJD31CG | 3.0 A, 100 V NPN Bipolar Power Transistor, DPAK (SINGLE GAUGE) TO-252, 75-TUBE | onsemi | NJVMJD31CT4G-VF01 vs MJD31CG |
MJD31CQ-13 | Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3/2 | Diodes Incorporated | NJVMJD31CT4G-VF01 vs MJD31CQ-13 |
MJD31CRL | 3A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC, CASE 369C, DPAK-3 | onsemi | NJVMJD31CT4G-VF01 vs MJD31CRL |