Part Details for NSVBCP56-10T3G by onsemi
Overview of NSVBCP56-10T3G by onsemi
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for NSVBCP56-10T3G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
68X4338
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Newark | Transistor, Bipolar, Npn, 80V, 1A/Sot223, Transistor Polarity:Npn, Collector Emitter Voltage Max:80V, Continuous Collector Current:1A, Power Dissipation:1.5W, Transistor Mounting:Surface Mount, No. Of Pins:4Pins Rohs Compliant: Yes |Onsemi NSVBCP56-10T3G Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.1280 / $0.1970 | Buy Now |
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DISTI #
NSVBCP56-10T3GOSCT-ND
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DigiKey | TRANS NPN 80V 1A SOT223 Min Qty: 1 Lead time: 11 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
4890 In Stock |
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$0.1272 / $0.4400 | Buy Now |
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DISTI #
NSVBCP56-10T3G
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Avnet Americas | Trans GP BJT NPN 80V 1A 4-Pin SOT-223 T/R - Tape and Reel (Alt: NSVBCP56-10T3G) RoHS: Compliant Min Qty: 8000 Package Multiple: 4000 Lead time: 11 Weeks, 0 Days Container: Reel | 0 |
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$0.1230 / $0.1468 | Buy Now |
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DISTI #
863-NSVBCP56-10T3G
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Mouser Electronics | Bipolar Transistors - BJT SS SOT223 GP XSTR NPN 80V RoHS: Compliant | 6246 |
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$0.1250 / $0.4400 | Buy Now |
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DISTI #
P40:2555_18952410
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Arrow Electronics | Trans GP BJT NPN 80V 1A 1500mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 2144 | Europe - 2900 |
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$0.1079 / $0.4029 | Buy Now |
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Future Electronics | BCP56 Series 80 V 1 A Surface Mount NPN Silicon Epitaxial Transistor - SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 11 Weeks Container: Reel | 128000Reel |
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$0.1280 / $0.1340 | Buy Now |
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DISTI #
73527504
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Verical | Trans GP BJT NPN 80V 1A 1500mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Date Code: 2326 | Americas - 84000 |
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$0.1741 / $0.2171 | Buy Now |
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Rochester Electronics | BCP56 - NPN Bipolar Transistor RoHS: Compliant Status: Active Min Qty: 1 | 65863 |
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$0.1230 / $0.1447 | Buy Now |
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DISTI #
NSVBCP56-10T3G
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Avnet Silica | Trans GP BJT NPN 80V 1A 4-Pin SOT-223 T/R (Alt: NSVBCP56-10T3G) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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Chip1Cloud | TRANS NPN 80V 1A SOT-223 | 3330 |
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RFQ |
Part Details for NSVBCP56-10T3G
NSVBCP56-10T3G CAD Models
NSVBCP56-10T3G Part Data Attributes:
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NSVBCP56-10T3G
onsemi
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Datasheet
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Compare Parts:
NSVBCP56-10T3G
onsemi
1.0 A, 80 V NPN Bipolar Junction Transistor, 4000-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | TO-261, 4 PIN | |
| Manufacturer Package Code | 0.0318 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 1 A | |
| Collector-Emitter Voltage-Max | 80 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 63 | |
| JEDEC-95 Code | TO-261AA | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | PNP | |
| Power Dissipation-Max (Abs) | 1.5 W | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 130 MHz |