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Transistors / Power Field-Effect Transistors / NTB004N10G
Datasheets
NTB004N10G by: onsemi

Power MOSFET 201 Amps, 100 Volts N-Channel Enhancement - Mode D2PAK, 800-REEL

Part Details for NTB004N10G by onsemi

Overview of NTB004N10G by onsemi

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Price & Stock for NTB004N10G

Part # Distributor Description Stock Price Buy
DISTI # 488-NTB004N10GCT-ND
DigiKey MOSFET N-CH 100V 201A TO263 Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 9878
In Stock
  • 1 $6.6300
  • 10 $5.9910
  • 25 $5.7124
  • 100 $4.7372
  • 250 $4.3192
  • 800 $4.0405
  • 1,600 $3.6226
  • 2,400 $3.4832
$3.4832 / $6.6300 Buy Now
DISTI # NTB004N10G
Avnet Americas Transistor MOSFET N-Channel 100V 201A 3-Pin D2PAK T/R - Tape and Reel (Alt: NTB004N10G) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 800 $4.0833
  • 1,600 $3.9730
  • 3,200 $3.8626
  • 4,800 $3.7522
  • 6,400 $3.6419
  • 8,000 $3.5315
  • 80,000 $3.4212
$3.4212 / $4.0833 Buy Now
DISTI # 863-NTB004N10G
Mouser Electronics MOSFET MV5 SOAFET 4.2MOHM 100V N-FET, D2PAK RoHS: Compliant 748
  • 1 $6.6000
  • 10 $5.8800
  • 25 $5.4500
  • 100 $4.6800
  • 250 $4.2500
  • 500 $4.1100
  • 800 $3.5700
$3.5700 / $6.6000 Buy Now
Future Electronics MOSFET MV5 SOAFET 4.2MOHM 100V N-FET D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel 0
Reel
  • 800 $3.4800
$3.4800 Buy Now
Future Electronics MOSFET MV5 SOAFET 4.2MOHM 100V N-FET D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel 0
Reel
  • 800 $3.4800
$3.4800 Buy Now
Future Electronics MOSFET MV5 SOAFET 4.2MOHM 100V N-FET D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Cut Tape/Mini-Reel 0
Cut Tape/Mini-Reel
  • 1 $4.1700
  • 10 $3.9200
  • 40 $3.7700
  • 125 $3.6600
  • 400 $3.4800
$3.4800 / $4.1700 Buy Now
DISTI # NTB004N10G
Avnet Americas Transistor MOSFET N-Channel 100V 201A 3-Pin D2PAK T/R - Tape and Reel (Alt: NTB004N10G) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 800 $4.0833
  • 1,600 $3.9730
  • 3,200 $3.8626
  • 4,800 $3.7522
  • 6,400 $3.6419
  • 8,000 $3.5315
  • 80,000 $3.4212
$3.4212 / $4.0833 Buy Now
Ameya Holding Limited   Min Qty: 200 795
  • 200 $7.8922
  • 400 $7.6554
$7.6554 / $7.8922 Buy Now
DISTI # NTB004N10G
Avnet Americas Transistor MOSFET N-Channel 100V 201A 3-Pin D2PAK T/R - Tape and Reel (Alt: NTB004N10G) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 800 $4.0833
  • 1,600 $3.9730
  • 3,200 $3.8626
  • 4,800 $3.7522
  • 6,400 $3.6419
  • 8,000 $3.5315
  • 80,000 $3.4212
$3.4212 / $4.0833 Buy Now
DISTI # NTB004N10G
Avnet Asia Transistor MOSFET N-Channel 100V 201A 3-Pin D2PAK T/R (Alt: NTB004N10G) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 20 Weeks, 0 Days 0
  • 800 $3.6303
  • 1,600 $3.5831
  • 2,400 $3.5372
  • 4,000 $3.4924
  • 8,000 $3.4062
  • 20,000 $3.3241
  • 40,000 $3.2459
$3.2459 / $3.6303 Buy Now

Part Details for NTB004N10G

NTB004N10G Part Data Attributes

Parametric Data
NTB004N10G onsemi
Buy Now Datasheet
Compare Parts:
NTB004N10G onsemi Power MOSFET 201 Amps, 100 Volts N-Channel Enhancement - Mode D2PAK, 800-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Manufacturer Package Code 418AJ
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 53 Weeks
Date Of Intro 2020-01-07
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 520 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 201 A
Drain-source On Resistance-Max 0.0042 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 147 pF
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 340 W
Pulsed Drain Current-Max (IDM) 3002 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

Alternate Parts for NTB004N10G

This table gives cross-reference parts and alternative options found for NTB004N10G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTB004N10G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
CSD19535KTTT 100-V, N channel NexFET™ power MOSFET, single D2PAK, 3.4 mOhm 2-DDPAK/TO-263 -55 to 175 Texas Instruments NTB004N10G vs CSD19535KTTT
Part Number Description Manufacturer Compare
CSD19535KTTT 100-V, N channel NexFET™ power MOSFET, single D2PAK, 3.4 mOhm 2-DDPAK/TO-263 -55 to 175 Texas Instruments NTB004N10G vs CSD19535KTTT

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