Part Details for NTB6411ANG by onsemi
Overview of NTB6411ANG by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for NTB6411ANG
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 12 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 72A I(D), 100V, 0.014OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 9 |
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$2.6075 / $3.1290 | Buy Now |
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ComSIT USA | 100 V, 72 A, 14 MILLI OHM, N-CHANNEL POWER MOSFET Power Field-Effect Transistor, 72A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 250 |
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RFQ |
Part Details for NTB6411ANG
NTB6411ANG CAD Models
NTB6411ANG Part Data Attributes
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NTB6411ANG
onsemi
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Datasheet
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NTB6411ANG
onsemi
Power MOSFET 100V 72A 14 mohm Single N-Channel D2PAK, D2PAK 2 LEAD, 50-TUBE
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | D2PAK 2 LEAD | |
| Package Description | D2PAK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | 418B-04 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 470 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 72 A | |
| Drain-source On Resistance-Max | 0.014 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 217 W | |
| Pulsed Drain Current-Max (IDM) | 285 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |
Alternate Parts for NTB6411ANG
This table gives cross-reference parts and alternative options found for NTB6411ANG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTB6411ANG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NTB6411ANT4G | Power MOSFET 100V 72A 14 mohm Single N-Channel D2PAK, D2PAK 2 LEAD, 800-REEL | onsemi | NTB6411ANG vs NTB6411ANT4G |
| NTB6411ANG | 72A, 100V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 418B-04, D2PAK-3 | Rochester Electronics LLC | NTB6411ANG vs NTB6411ANG |