Part Details for NTB6413ANT4G by onsemi
Overview of NTB6413ANT4G by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for NTB6413ANT4G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
NTB6413ANT4GOSCT-ND
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DigiKey | MOSFET N-CH 100V 42A D2PAK Min Qty: 1 Lead time: 42 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
549 In Stock |
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$0.9220 / $2.1200 | Buy Now |
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DISTI #
NTB6413ANT4G
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Avnet Americas | Trans MOSFET N-CH 100V 42A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: NTB6413ANT4G) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 42 Weeks, 0 Days Container: Reel | 0 |
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$0.9557 / $1.0698 | Buy Now |
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DISTI #
863-NTB6413ANT4G
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Mouser Electronics | MOSFET NFET D2PAK 100V 40A 30MO RoHS: Compliant | 2042 |
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$0.9220 / $1.8900 | Buy Now |
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Future Electronics | N-Channel 100 V 28 mOhm 136 W Surface Mount Power MOSFET - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$0.9400 / $1.0200 | Buy Now |
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DISTI #
NTB6413ANT4G
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Avnet Americas | Trans MOSFET N-CH 100V 42A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: NTB6413ANT4G) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 42 Weeks, 0 Days Container: Reel | 0 |
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$0.9557 / $1.0698 | Buy Now |
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DISTI #
NTB6413ANT4G
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Avnet Americas | Trans MOSFET N-CH 100V 42A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: NTB6413ANT4G) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 42 Weeks, 0 Days Container: Reel | 0 |
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$0.9557 / $1.0698 | Buy Now |
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DISTI #
NTB6413ANT4G
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Avnet Asia | Trans MOSFET N-CH 100V 42A 3-Pin(2+Tab) D2PAK T/R (Alt: NTB6413ANT4G) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 42 Weeks, 0 Days | 0 |
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$0.8391 / $0.9384 | Buy Now |
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DISTI #
NTB6413ANT4G
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Avnet Silica | Trans MOSFET N-CH 100V 42A 3-Pin(2+Tab) D2PAK T/R (Alt: NTB6413ANT4G) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 5 Weeks, 2 Days | Silica - 0 |
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Buy Now | |
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DISTI #
NTB6413ANT4G
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EBV Elektronik | Trans MOSFET N-CH 100V 42A 3-Pin(2+Tab) D2PAK T/R (Alt: NTB6413ANT4G) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 6 Weeks, 2 Days | EBV - 0 |
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Buy Now | |
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Wuhan P&S | N-Channel Power MOSFET 100 V, 42 A, 28 m�� Min Qty: 1 | 130 |
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$1.2100 / $2.4900 | Buy Now |
Part Details for NTB6413ANT4G
NTB6413ANT4G CAD Models
NTB6413ANT4G Part Data Attributes
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NTB6413ANT4G
onsemi
Buy Now
Datasheet
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Compare Parts:
NTB6413ANT4G
onsemi
Single N-Channel Power MOSFET 100V, 42A, 28mΩ, D2PAK 2 LEAD, 800-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | D2PAK 2 LEAD | |
| Package Description | D2PAK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | 418B-04 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 23 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 200 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 42 A | |
| Drain-source On Resistance-Max | 0.028 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 136 W | |
| Pulsed Drain Current-Max (IDM) | 178 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |
Alternate Parts for NTB6413ANT4G
This table gives cross-reference parts and alternative options found for NTB6413ANT4G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTB6413ANT4G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| AUIRLR3110ZTRL | Power Field-Effect Transistor, 42A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Infineon Technologies AG | NTB6413ANT4G vs AUIRLR3110ZTRL |
| NVD6824NLT4G | Single N−Channel Power MOSFET 100V, 41A, 20mΩ Power MOSFET, DPAK (SINGLE GAUGE) TO-252, 2500-REEL, Automotive Qualified | onsemi | NTB6413ANT4G vs NVD6824NLT4G |
| IRLR3110ZPBF | Power Field-Effect Transistor, 63A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, D-PAK, 3 PIN | Infineon Technologies AG | NTB6413ANT4G vs IRLR3110ZPBF |
| AUIRLR3110ZTR | Power Field-Effect Transistor, 42A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | NTB6413ANT4G vs AUIRLR3110ZTR |
| AUIRLR3110ZTRL | Power Field-Effect Transistor, 42A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | NTB6413ANT4G vs AUIRLR3110ZTRL |
| AUIRLR3110ZTRR | Power Field-Effect Transistor, 42A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | NTB6413ANT4G vs AUIRLR3110ZTRR |
| IRLR3110ZTRLPBF | Power Field-Effect Transistor, 42A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | NTB6413ANT4G vs IRLR3110ZTRLPBF |
| IRLR3110ZTRLPBF | Power Field-Effect Transistor, 42A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | Infineon Technologies AG | NTB6413ANT4G vs IRLR3110ZTRLPBF |
| IRLR3110ZPBF | Power Field-Effect Transistor, 63A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, D-PAK, 3 PIN | International Rectifier | NTB6413ANT4G vs IRLR3110ZPBF |
| AUIRLR3110Z | Power Field-Effect Transistor, 42A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Infineon Technologies AG | NTB6413ANT4G vs AUIRLR3110Z |