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Transistors / Power Field-Effect Transistors / NTBG014N120M3P
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NTBG014N120M3P by: onsemi

Silicon Carbide (SiC) MOSFET - EliteSiC, 14 mohm, 1200 V, M3P, D2PAK-7L, 800-REEL

Part Details for NTBG014N120M3P by onsemi

Overview of NTBG014N120M3P by onsemi

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Applications Energy and Power Systems Renewable Energy Automotive

Price & Stock for NTBG014N120M3P

Part # Distributor Description Stock Price Buy
DISTI # 5556-NTBG014N120M3PCT-ND
DigiKey SIC MOSFET 1200 V 14 MOHM M3P SE Min Qty: 1 Lead time: 17 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 288
In Stock
  • 1 $29.0000
  • 10 $25.7700
  • 100 $22.5396
  • 800 $19.2338
$19.2338 / $29.0000 Buy Now
DISTI # NTBG014N120M3P
Avnet Americas Silicon Carbide (SiC) MOSFET – EliteSiC, 14 mohm, 1200 V, M3P, D2PAK-7L - Tape and Reel (Alt: NTBG014N120M3P) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 800 $22.0189
  • 1,600 $21.4237
  • 3,200 $20.8286
  • 4,800 $20.2335
  • 6,400 $19.6384
  • 8,000 $19.0433
  • 80,000 $18.4482
$18.4482 / $22.0189 Buy Now
DISTI # 863-NTBG014N120M3P
Mouser Electronics MOSFET SIC MOS D2PAK-7L 14MOHM 1200V RoHS: Compliant 1691
  • 1 $29.0000
  • 10 $25.7700
  • 25 $24.0400
  • 50 $23.2900
  • 100 $22.5400
  • 250 $21.0400
  • 500 $19.2400
  • 800 $18.7800
$18.7800 / $29.0000 Buy Now
Future Electronics 1200V,74A,14MOHM, D2PAK7 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 59
  • 1 $22.9800
  • 5 $22.6600
  • 20 $22.4000
  • 50 $22.2200
  • 125 $21.8800
$21.8800 / $22.9800 Buy Now
Future Electronics 1200V,74A,14MOHM, D2PAK7 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 51
  • 1 $22.9800
  • 5 $22.6800
  • 25 $22.3800
  • 50 $22.2600
  • 150 $21.8800
$21.8800 / $22.9800 Buy Now
DISTI # NTBG014N120M3P
Avnet Americas Silicon Carbide (SiC) MOSFET – EliteSiC, 14 mohm, 1200 V, M3P, D2PAK-7L - Tape and Reel (Alt: NTBG014N120M3P) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 800 $22.0189
  • 1,600 $21.4237
  • 3,200 $20.8286
  • 4,800 $20.2335
  • 6,400 $19.6384
  • 8,000 $19.0433
  • 80,000 $18.4482
$18.4482 / $22.0189 Buy Now
DISTI # NTBG014N120M3P
Avnet Americas Silicon Carbide (SiC) MOSFET – EliteSiC, 14 mohm, 1200 V, M3P, D2PAK-7L - Tape and Reel (Alt: NTBG014N120M3P) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 800 $22.0189
  • 1,600 $21.4237
  • 3,200 $20.8286
  • 4,800 $20.2335
  • 6,400 $19.6384
  • 8,000 $19.0433
  • 80,000 $18.4482
$18.4482 / $22.0189 Buy Now
DISTI # NTBG014N120M3P
Avnet Asia Silicon Carbide (SiC) MOSFET – EliteSiC, 14 mohm, 1200 V, M3P, D2PAK-7L (Alt: NTBG014N120M3P) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days 0
  • 800 $19.5758
  • 1,600 $19.3216
  • 2,400 $19.0739
  • 4,000 $18.8324
  • 8,000 $18.3674
  • 20,000 $17.9248
  • 40,000 $17.5031
$17.5031 / $19.5758 Buy Now
DISTI # NTBG014N120M3P
Avnet Silica Silicon Carbide (SiC) MOSFET  EliteSiC, 14 mohm, 1200 V, M3P, D2PAK-7L (Alt: NTBG014N120M3P) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 2 Weeks, 4 Days Silica - 0
Buy Now
DISTI # NTBG014N120M3P
EBV Elektronik Silicon Carbide (SiC) MOSFET  EliteSiC, 14 mohm, 1200 V, M3P, D2PAK-7L (Alt: NTBG014N120M3P) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 2 Weeks, 5 Days EBV - 1600
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 1 140
  • 6 $25.3100
  • 140 $23.6300
$23.6300 / $25.3100 Buy Now
Wuhan P&S 1200V, N-Channel Silicon Carbide MOSFET Min Qty: 1 826
  • 1 $91.4400
  • 100 $58.3700
  • 500 $48.1300
  • 1,000 $44.2500
$44.2500 / $91.4400 Buy Now

Part Details for NTBG014N120M3P

NTBG014N120M3P CAD Models

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NTBG014N120M3P Part Data Attributes

Parametric Data
NTBG014N120M3P onsemi
Buy Now Datasheet
Compare Parts:
NTBG014N120M3P onsemi Silicon Carbide (SiC) MOSFET - EliteSiC, 14 mohm, 1200 V, M3P, D2PAK-7L, 800-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Package Description D2PAK-7
Manufacturer Package Code 418BJ
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 418 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 104 A
Drain-source On Resistance-Max 0.02 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 27 pF
JESD-30 Code R-PSSO-G7
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 7
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 454 W
Pulsed Drain Current-Max (IDM) 257 A
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

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