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Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L, 800-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
5556-NTBG015N065SC1CT-ND
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DigiKey | SILICON CARBIDE MOSFET, NCHANNEL Min Qty: 1 Lead time: 17 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1244 In Stock |
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$18.0364 / $27.2000 | Buy Now |
DISTI #
NTBG015N065SC1
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Avnet Americas | Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L - Tape and Reel (Alt: NTBG015N065SC1) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
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$17.2997 / $20.6481 | Buy Now |
DISTI #
81AJ0219
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Avnet Americas | Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L - Bulk (Alt: 81AJ0219) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 40 Weeks, 0 Days Container: Bulk | 64 Partner Stock |
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$18.8700 | Buy Now |
DISTI #
863-NTBG015N065SC1
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Mouser Electronics | MOSFET SIC MOS D2PAK-7L 650V | 0 |
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$17.6100 / $27.2000 | Order Now |
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Future Electronics | NTBG015N065SC1 Series N-Channel 650 V 18 mOhm Silicon Carbide MOSFET - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 1600Reel |
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$15.5100 | Buy Now |
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Future Electronics | NTBG015N065SC1 Series N-Channel 650 V 18 mOhm Silicon Carbide MOSFET - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$17.7000 | Buy Now |
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Future Electronics | NTBG015N065SC1 Series N-Channel 650 V 18 mOhm Silicon Carbide MOSFET - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$17.7000 | Buy Now |
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Future Electronics | NTBG015N065SC1 Series N-Channel 650 V 18 mOhm Silicon Carbide MOSFET - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 | 0 |
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$17.7000 / $18.5800 | Buy Now |
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Rochester Electronics | NTBG015N - MOSFET SiC Power, Single N-Channel, D2PAK-7L 650 V, 12 m, 145 A RoHS: Compliant Status: Active Min Qty: 1 | 228 |
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$17.2900 / $20.3500 | Buy Now |
DISTI #
NTBG015N065SC1
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Avnet Americas | Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L - Tape and Reel (Alt: NTBG015N065SC1) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
|
$17.2997 / $20.6481 | Buy Now |
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NTBG015N065SC1
onsemi
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Datasheet
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Compare Parts:
NTBG015N065SC1
onsemi
Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L, 800-REEL
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Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Package Description | D2PAK-7 | |
Manufacturer Package Code | 418BJ | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 35 Weeks | |
Date Of Intro | 2020-03-31 | |
Samacsys Manufacturer | onsemi | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 176 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 39.42 pF | |
JEDEC-95 Code | TO-263CB | |
JESD-30 Code | R-PSSO-G7 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 7 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 867 W | |
Pulsed Drain Current-Max (IDM) | 873 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Element Material | SILICON CARBIDE |