Datasheets
NTBG015N065SC1 by: onsemi

Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L, 800-REEL

Part Details for NTBG015N065SC1 by onsemi

Overview of NTBG015N065SC1 by onsemi

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Price & Stock for NTBG015N065SC1

Part # Distributor Description Stock Price Buy
DISTI # 5556-NTBG015N065SC1CT-ND
DigiKey SILICON CARBIDE MOSFET, NCHANNEL Min Qty: 1 Lead time: 17 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 1244
In Stock
  • 1 $27.2000
  • 10 $24.1660
  • 100 $21.1364
  • 800 $18.0364
$18.0364 / $27.2000 Buy Now
DISTI # NTBG015N065SC1
Avnet Americas Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L - Tape and Reel (Alt: NTBG015N065SC1) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 800 $20.6481
  • 1,600 $20.0900
  • 3,200 $19.5320
  • 4,800 $18.9739
  • 6,400 $18.4158
  • 8,000 $17.8578
  • 80,000 $17.2997
$17.2997 / $20.6481 Buy Now
DISTI # 81AJ0219
Avnet Americas Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L - Bulk (Alt: 81AJ0219) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 40 Weeks, 0 Days Container: Bulk 64 Partner Stock
  • 1 $18.8700
$18.8700 Buy Now
DISTI # 863-NTBG015N065SC1
Mouser Electronics MOSFET SIC MOS D2PAK-7L 650V 0
  • 1 $27.2000
  • 10 $24.1700
  • 25 $22.9900
  • 50 $22.6000
  • 100 $21.1400
  • 250 $20.0800
  • 500 $18.0400
  • 800 $17.6100
$17.6100 / $27.2000 Order Now
Future Electronics NTBG015N065SC1 Series N-Channel 650 V 18 mOhm Silicon Carbide MOSFET - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel 1600
Reel
  • 800 $15.5100
$15.5100 Buy Now
Future Electronics NTBG015N065SC1 Series N-Channel 650 V 18 mOhm Silicon Carbide MOSFET - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel 0
Reel
  • 800 $17.7000
$17.7000 Buy Now
Future Electronics NTBG015N065SC1 Series N-Channel 650 V 18 mOhm Silicon Carbide MOSFET - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel 0
Reel
  • 800 $17.7000
$17.7000 Buy Now
Future Electronics NTBG015N065SC1 Series N-Channel 650 V 18 mOhm Silicon Carbide MOSFET - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 0
  • 1 $18.5800
  • 5 $18.3300
  • 20 $18.1100
  • 50 $17.9700
  • 125 $17.7000
$17.7000 / $18.5800 Buy Now
Rochester Electronics NTBG015N - MOSFET SiC Power, Single N-Channel, D2PAK-7L 650 V, 12 m, 145 A RoHS: Compliant Status: Active Min Qty: 1 228
  • 1 $20.3500
  • 25 $19.9400
  • 100 $19.1300
  • 500 $18.3100
  • 1,000 $17.2900
$17.2900 / $20.3500 Buy Now
DISTI # NTBG015N065SC1
Avnet Americas Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L - Tape and Reel (Alt: NTBG015N065SC1) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 800 $20.6481
  • 1,600 $20.0900
  • 3,200 $19.5320
  • 4,800 $18.9739
  • 6,400 $18.4158
  • 8,000 $17.8578
  • 80,000 $17.2997
$17.2997 / $20.6481 Buy Now
DISTI # 81AJ0219
Avnet Americas Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L - Bulk (Alt: 81AJ0219) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 40 Weeks, 0 Days Container: Bulk 64 Partner Stock
  • 1 $18.8700
$18.8700 Buy Now
Ameya Holding Limited   Min Qty: 10 407
  • 10 $40.7866
  • 100 $39.5254
  • 250 $38.6840
  • 500 $37.8444
$37.8444 / $40.7866 Buy Now
DISTI # NTBG015N065SC1
Avnet Americas Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L - Tape and Reel (Alt: NTBG015N065SC1) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 800 $20.6481
  • 1,600 $20.0900
  • 3,200 $19.5320
  • 4,800 $18.9739
  • 6,400 $18.4158
  • 8,000 $17.8578
  • 80,000 $17.2997
$17.2997 / $20.6481 Buy Now
DISTI # 81AJ0219
Avnet Americas Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L - Bulk (Alt: 81AJ0219) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 40 Weeks, 0 Days Container: Bulk 64 Partner Stock
  • 1 $18.8700
$18.8700 Buy Now
DISTI # SMC-NTBG015N065SC1
Sensible Micro Corporation AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 30
RFQ
Chip 1 Exchange INSTOCK 1935
RFQ
DISTI # NTBG015N065SC1
Avnet Asia Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L (Alt: NTBG015N065SC1) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days 64
  • 800 $5.7861
  • 1,600 $5.7803
$5.7803 / $5.7861 Buy Now
DISTI # NTBG015N065SC1
Avnet Silica Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L (Alt: NTBG015N065SC1) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 2 Weeks, 4 Days Silica - 0
Buy Now
DISTI # NTBG015N065SC1
EBV Elektronik Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L (Alt: NTBG015N065SC1) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 2 Weeks, 5 Days EBV - 0
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 800 1600
  • 800 $22.1600
  • 1,600 $20.6800
$20.6800 / $22.1600 Buy Now
Wuhan P&S - Min Qty: 1 1389
  • 1 $67.2400
  • 100 $42.9200
  • 500 $35.3900
  • 1,000 $32.5400
$32.5400 / $67.2400 Buy Now

Part Details for NTBG015N065SC1

NTBG015N065SC1 CAD Models

NTBG015N065SC1 Part Data Attributes

NTBG015N065SC1 onsemi
Buy Now Datasheet
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NTBG015N065SC1 onsemi Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L, 800-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Package Description D2PAK-7
Manufacturer Package Code 418BJ
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 35 Weeks
Date Of Intro 2020-03-31
Samacsys Manufacturer onsemi
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 176 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 39.42 pF
JEDEC-95 Code TO-263CB
JESD-30 Code R-PSSO-G7
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 7
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 867 W
Pulsed Drain Current-Max (IDM) 873 A
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON CARBIDE

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