-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for NTBG022N120M3S by onsemi
Overview of NTBG022N120M3S by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for NTBG022N120M3S
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
5556-NTBG022N120M3SCT-ND
|
DigiKey | SIC MOSFET 1200 V 22 MOHM M3S SE Min Qty: 1 Lead time: 17 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1426 In Stock |
|
$12.6275 / $18.2900 | Buy Now |
|
DISTI #
NTBG022N120M3S
|
Avnet Americas | Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L - Tape and Reel (Alt: NTBG022N120M3S) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel | 4800 |
|
RFQ | |
|
DISTI #
77AK5363
|
Avnet Americas | Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L - Product that comes on tape, but is not reeled (Alt: 77AK5363) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 38 Weeks, 3 Days Container: Ammo Pack | 160 Partner Stock |
|
$10.2600 | Buy Now |
|
DISTI #
863-NTBG022N120M3S
|
Mouser Electronics | MOSFET SIC MOS D2PAK-7L 22MOHM 1200V RoHS: Compliant | 931 |
|
$11.5800 / $18.2900 | Buy Now |
|
|
Future Electronics | N-Channel 1200 V 30 mOhm 234 W Surface Mount SiC MOSFET - D2PAK-7 RoHS: Non Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 | 114 |
|
$11.3600 / $11.9300 | Buy Now |
|
|
Future Electronics | N-Channel 1200 V 30 mOhm 234 W Surface Mount SiC MOSFET - D2PAK-7 RoHS: Non Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 | 40 |
|
$11.3600 / $11.9300 | Buy Now |
|
|
Future Electronics | N-Channel 1200 V 30 mOhm 234 W Surface Mount SiC MOSFET - D2PAK-7 RoHS: Non Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
|
$11.3600 | Buy Now |
|
DISTI #
NTBG022N120M3S
|
Avnet Americas | Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L - Tape and Reel (Alt: NTBG022N120M3S) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel | 4800 |
|
RFQ | |
|
DISTI #
77AK5363
|
Avnet Americas | Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L - Product that comes on tape, but is not reeled (Alt: 77AK5363) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 38 Weeks, 3 Days Container: Ammo Pack | 160 Partner Stock |
|
$10.2600 | Buy Now |
|
|
Ameya Holding Limited | Min Qty: 800 | 799 |
|
$16.6498 / $17.3363 | Buy Now |
Part Details for NTBG022N120M3S
NTBG022N120M3S CAD Models
NTBG022N120M3S Part Data Attributes
|
|
NTBG022N120M3S
onsemi
Buy Now
Datasheet
|
Compare Parts:
NTBG022N120M3S
onsemi
Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L, 800-REEL
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | D2PAK-7 | |
| Manufacturer Package Code | 418BJ | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 267 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 58 A | |
| Drain-source On Resistance-Max | 0.03 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 14 pF | |
| JEDEC-95 Code | TO-263CB | |
| JESD-30 Code | R-PSSO-G7 | |
| Number of Elements | 1 | |
| Number of Terminals | 7 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 234 W | |
| Pulsed Drain Current-Max (IDM) | 159 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE |
Alternate Parts for NTBG022N120M3S
This table gives cross-reference parts and alternative options found for NTBG022N120M3S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTBG022N120M3S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NVBG022N120M3S | Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L, 800-REEL, Automotive Qualified | onsemi | NTBG022N120M3S vs NVBG022N120M3S |