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Part Details for NTBG028N170M1 by onsemi
Overview of NTBG028N170M1 by onsemi
- Distributor Offerings:
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- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for NTBG028N170M1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
5556-NTBG028N170M1CT-ND
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DigiKey | SIC MOSFET 1700 V 28 MOHM M1 SER Min Qty: 1 Lead time: 17 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
743 In Stock |
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$25.0538 / $36.1700 | Buy Now |
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DISTI #
NTBG028N170M1
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Avnet Americas | Silicon Carbide (SiC) MOSFET – EliteSiC, 28 mohm, 1700 V, M1, D2PAK-7L - Tape and Reel (Alt: NTBG028N170M1) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
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$24.8057 / $29.6068 | Buy Now |
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DISTI #
57AK6404
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Avnet Americas | Silicon Carbide (SiC) MOSFET – EliteSiC, 28 mohm, 1700 V, M1, D2PAK-7L - Bulk (Alt: 57AK6404) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 14 Weeks, 3 Days Container: Bulk | 62 Partner Stock |
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$27.0500 | Buy Now |
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DISTI #
863-NTBG028N170M1
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Mouser Electronics | MOSFET SIC 1700V MOS 28MO IN TO263-7L RoHS: Compliant | 1004 |
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$25.0000 / $36.1600 | Buy Now |
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Future Electronics | 1700 V 71A 428W N-Channel Surface Mount Silicon Carbide MOSFET - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 | 55 |
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$24.5100 / $25.7400 | Buy Now |
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Future Electronics | 1700 V 71A 428W N-Channel Surface Mount Silicon Carbide MOSFET - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 | 0 |
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$25.3700 / $26.6400 | Buy Now |
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Future Electronics | 1700 V 71A 428W N-Channel Surface Mount Silicon Carbide MOSFET - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$24.5100 | Buy Now |
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DISTI #
NTBG028N170M1
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Avnet Americas | Silicon Carbide (SiC) MOSFET – EliteSiC, 28 mohm, 1700 V, M1, D2PAK-7L - Tape and Reel (Alt: NTBG028N170M1) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
|
$24.8057 / $29.6068 | Buy Now |
|
DISTI #
57AK6404
|
Avnet Americas | Silicon Carbide (SiC) MOSFET – EliteSiC, 28 mohm, 1700 V, M1, D2PAK-7L - Bulk (Alt: 57AK6404) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 14 Weeks, 3 Days Container: Bulk | 62 Partner Stock |
|
$27.0500 | Buy Now |
|
DISTI #
NTBG028N170M1
|
Avnet Americas | Silicon Carbide (SiC) MOSFET – EliteSiC, 28 mohm, 1700 V, M1, D2PAK-7L - Tape and Reel (Alt: NTBG028N170M1) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
|
$24.8057 / $29.6068 | Buy Now |
Part Details for NTBG028N170M1
NTBG028N170M1 CAD Models
NTBG028N170M1 Part Data Attributes
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NTBG028N170M1
onsemi
Buy Now
Datasheet
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Compare Parts:
NTBG028N170M1
onsemi
Silicon Carbide (SiC) MOSFET - EliteSiC, 28 mohm, 1700 V, M1, D2PAK-7L, 800-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | D2PAK-7 | |
| Manufacturer Package Code | 418BJ | |
| Reach Compliance Code | compliant | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 450 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1700 V | |
| Drain Current-Max (ID) | 71 A | |
| Drain-source On Resistance-Max | 0.04 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 15 pF | |
| JEDEC-95 Code | TO-263CB | |
| JESD-30 Code | R-PSSO-G7 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 7 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 428 W | |
| Pulsed Drain Current-Max (IDM) | 195 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE |