Part Details for NTBG030N120M3S by onsemi
Overview of NTBG030N120M3S by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for NTBG030N120M3S
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
5556-NTBG030N120M3SCT-ND
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DigiKey | SILICON CARBIDE (SIC) MOSFET - E Min Qty: 1 Lead time: 17 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
783 In Stock |
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$12.1656 / $17.6200 | Buy Now |
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DISTI #
NTBG030N120M3S
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Avnet Americas | Silicon Carbide MOSFET, N Channel, 77 A, 1.2 kV, 0.029 ohm, D2PAK-7L - Tape and Reel (Alt: NTBG030N120M3S) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
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$10.3007 / $12.2944 | Buy Now |
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DISTI #
57AK6405
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Avnet Americas | Silicon Carbide MOSFET, N Channel, 77 A, 1.2 kV, 0.029 ohm, D2PAK-7L - Bulk (Alt: 57AK6405) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 29 Weeks, 3 Days Container: Bulk | 160 Partner Stock |
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$13.8000 / $19.3800 | Buy Now |
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DISTI #
863-NTBG030N120M3S
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Mouser Electronics | MOSFET SIC MOS D2PAK-7L 30MOHM 1200V M3 RoHS: Compliant | 1014 |
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$11.1500 / $17.6100 | Buy Now |
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Future Electronics | 1200V,30MOHM, D2PAK7 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 | 140 |
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$10.9400 / $11.4800 | Buy Now |
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Future Electronics | 1200V,30MOHM, D2PAK7 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Cut Tape/Mini-Reel | 130Cut Tape/Mini-Reel |
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$9.2300 | Buy Now |
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Future Electronics | 1200V,30MOHM, D2PAK7 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$10.9400 | Buy Now |
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Future Electronics | 1200V,30MOHM, D2PAK7 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 | 0 |
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$10.9400 / $11.4800 | Buy Now |
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DISTI #
NTBG030N120M3S
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Avnet Americas | Silicon Carbide MOSFET, N Channel, 77 A, 1.2 kV, 0.029 ohm, D2PAK-7L - Tape and Reel (Alt: NTBG030N120M3S) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
|
$10.3007 / $12.2944 | Buy Now |
|
DISTI #
57AK6405
|
Avnet Americas | Silicon Carbide MOSFET, N Channel, 77 A, 1.2 kV, 0.029 ohm, D2PAK-7L - Bulk (Alt: 57AK6405) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 29 Weeks, 3 Days Container: Bulk | 160 Partner Stock |
|
$13.8000 / $19.3800 | Buy Now |
Part Details for NTBG030N120M3S
NTBG030N120M3S CAD Models
NTBG030N120M3S Part Data Attributes
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NTBG030N120M3S
onsemi
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Datasheet
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Compare Parts:
NTBG030N120M3S
onsemi
Silicon Carbide (SiC) MOSFET - EliteSiC, 29 mohm, 1200 V, M3S, D2PAK-7L, 800-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Manufacturer Package Code | 418BJ | |
| Reach Compliance Code | unknown | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 220 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 77 A | |
| Drain-source On Resistance-Max | 0.039 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 9.4 pF | |
| JEDEC-95 Code | TO-263CB | |
| JESD-30 Code | R-PSSO-G7 | |
| Number of Elements | 1 | |
| Number of Terminals | 7 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 348 W | |
| Pulsed Drain Current-Max (IDM) | 207 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE |