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Transistors / Power Field-Effect Transistors / NTBG040N120SC1
Datasheets
NTBG040N120SC1 by: onsemi

Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK?7L, 800-REEL

Part Details for NTBG040N120SC1 by onsemi

Overview of NTBG040N120SC1 by onsemi

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Price & Stock for NTBG040N120SC1

Part # Distributor Description Stock Price Buy
DISTI # 5556-NTBG040N120SC1CT-ND
DigiKey SICFET N-CH 1200V 60A D2PAK-7 Min Qty: 1 Lead time: 17 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 800
In Stock
  • 1 $20.1700
  • 10 $17.9230
  • 100 $15.6759
  • 800 $13.3767
$13.3767 / $20.1700 Buy Now
DISTI # NTBG040N120SC1
Avnet Americas Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK?7L - Tape and Reel (Alt: NTBG040N120SC1) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel 4000
3200 Factory Stock
  • 800 $15.3137
  • 1,600 $14.8998
  • 3,200 $14.4859
  • 4,800 $14.0721
  • 6,400 $13.6582
  • 8,000 $13.2443
  • 80,000 $12.8304
$12.8304 / $15.3137 Buy Now
DISTI # 91AH8445
Avnet Americas Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK?7L - Bulk (Alt: 91AH8445) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 24 Weeks, 3 Days Container: Bulk 54 Partner Stock
  • 1 $14.0000
$14.0000 Buy Now
DISTI # 863-NTBG040N120SC1
Mouser Electronics MOSFET SIC MOS D2PAK-7L 40MOHM 1200V RoHS: Compliant 1714
  • 1 $17.8600
  • 10 $16.2700
  • 25 $15.8800
  • 50 $15.8400
  • 100 $14.8800
  • 250 $14.8300
  • 500 $13.4200
  • 800 $13.2500
$13.2500 / $17.8600 Buy Now
Future Electronics Single N-Channel 1200 V 60 A 357 W Surface Mount SiC Power Mosfet - D2PAK-7L RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel 800
Reel
  • 800 $11.5000
$11.5000 Buy Now
Future Electronics Single N-Channel 1200 V 60 A 357 W Surface Mount SiC Power Mosfet - D2PAK-7L RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 42
  • 1 $13.6400
  • 5 $13.4700
  • 25 $13.3000
  • 75 $13.1900
  • 200 $13.0000
$13.0000 / $13.6400 Buy Now
Future Electronics Single N-Channel 1200 V 60 A 357 W Surface Mount SiC Power Mosfet - D2PAK-7L RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel 0
Reel
  • 800 $13.0000
$13.0000 Buy Now
Future Electronics Single N-Channel 1200 V 60 A 357 W Surface Mount SiC Power Mosfet - D2PAK-7L RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel 0
Reel
  • 800 $13.0000
$13.0000 Buy Now
Future Electronics Single N-Channel 1200 V 60 A 357 W Surface Mount SiC Power Mosfet - D2PAK-7L RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 50 Container: Cut Tape/Mini-Reel 0
Cut Tape/Mini-Reel
  • 1 $13.6400
  • 3 $13.4600
  • 5 $13.3700
  • 15 $13.1900
  • 25 $13.0000
$13.0000 / $13.6400 Buy Now
Future Electronics Single N-Channel 1200 V 60 A 357 W Surface Mount SiC Power Mosfet - D2PAK-7L RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 50 Container: Cut Tape/Mini-Reel 0
Cut Tape/Mini-Reel
  • 1 $13.6400
  • 3 $13.4600
  • 5 $13.3700
  • 15 $13.1900
  • 25 $13.0000
$13.0000 / $13.6400 Buy Now
Future Electronics Single N-Channel 1200 V 60 A 357 W Surface Mount SiC Power Mosfet - D2PAK-7L RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 0
  • 1 $13.6400
  • 5 $13.4700
  • 25 $13.2900
  • 50 $13.2200
  • 150 $13.0000
$13.0000 / $13.6400 Buy Now
Rochester Electronics NTBG040N - N Channel MOSFET RoHS: Not Compliant Status: Active Min Qty: 1 34
  • 1 $15.0900
  • 25 $14.7900
  • 100 $14.1800
  • 500 $13.5800
  • 1,000 $12.8300
$12.8300 / $15.0900 Buy Now
DISTI # NTBG040N120SC1
Avnet Americas Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK?7L - Tape and Reel (Alt: NTBG040N120SC1) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel 4000
3200 Factory Stock
  • 800 $15.3137
  • 1,600 $14.8998
  • 3,200 $14.4859
  • 4,800 $14.0721
  • 6,400 $13.6582
  • 8,000 $13.2443
  • 80,000 $12.8304
$12.8304 / $15.3137 Buy Now
DISTI # 91AH8445
Avnet Americas Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK?7L - Bulk (Alt: 91AH8445) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 24 Weeks, 3 Days Container: Bulk 54 Partner Stock
  • 1 $14.0000
$14.0000 Buy Now
Ameya Holding Limited   Min Qty: 800 795
  • 800 $20.8036
  • 4,000 $20.3874
$20.3874 / $20.8036 Buy Now
DISTI # NTBG040N120SC1
Avnet Americas Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK?7L - Tape and Reel (Alt: NTBG040N120SC1) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel 4000
3200 Factory Stock
  • 800 $15.3137
  • 1,600 $14.8998
  • 3,200 $14.4859
  • 4,800 $14.0721
  • 6,400 $13.6582
  • 8,000 $13.2443
  • 80,000 $12.8304
$12.8304 / $15.3137 Buy Now
DISTI # 91AH8445
Avnet Americas Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK?7L - Bulk (Alt: 91AH8445) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 24 Weeks, 3 Days Container: Bulk 54 Partner Stock
  • 1 $14.0000
$14.0000 Buy Now
DISTI # NTBG040N120SC1
Avnet Asia Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK?7L (Alt: NTBG040N120SC1) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days 64
  • 800 $16.8990
  • 1,600 $15.7724
  • 2,400 $15.3627
  • 4,000 $14.9738
  • 8,000 $14.6041
  • 20,000 $14.2522
  • 40,000 $13.9168
$13.9168 / $16.8990 Buy Now
DISTI # NTBG040N120SC1
Avnet Silica Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK?7L (Alt: NTBG040N120SC1) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 2 Weeks, 4 Days Silica - 1600
Buy Now
DISTI # NTBG040N120SC1
EBV Elektronik Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK?7L (Alt: NTBG040N120SC1) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 2 Weeks, 5 Days EBV - 1600
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 800 1634
  • 800 $17.6000
  • 1,634 $16.4300
$16.4300 / $17.6000 Buy Now
Wuhan P&S 1200V, 56m��,60A,N�\\Channel SiC MOSFET Min Qty: 1 680
  • 1 $41.6000
  • 100 $26.5600
  • 500 $21.9000
  • 1,000 $20.1300
$20.1300 / $41.6000 Buy Now

Part Details for NTBG040N120SC1

NTBG040N120SC1 Part Data Attributes

Parametric Data
NTBG040N120SC1 onsemi
Buy Now Datasheet
Compare Parts:
NTBG040N120SC1 onsemi Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK?7L, 800-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Package Description D2PAK-7
Manufacturer Package Code 418BJ
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 578 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 60 A
Drain-source On Resistance-Max 0.056 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 12.5 pF
JEDEC-95 Code TO-263CB
JESD-30 Code R-PSSO-G7
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 7
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 357 W
Pulsed Drain Current-Max (IDM) 240 A
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE
Turn-off Time-Max (toff) 66 ns
Turn-on Time-Max (ton) 66 ns

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