Datasheets
NTBG060N065SC1 by: onsemi

Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, D2PAK-7L, 800-REEL

Part Details for NTBG060N065SC1 by onsemi

Overview of NTBG060N065SC1 by onsemi

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Applications Industrial Automation Motor control systems

Price & Stock for NTBG060N065SC1

Part # Distributor Description Stock Price Buy
DISTI # 5556-NTBG060N065SC1CT-ND
DigiKey SILICON CARBIDE (SIC) MOSFET - 4 Min Qty: 1 Lead time: 17 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 735
In Stock
  • 1 $10.5900
  • 10 $9.0760
  • 100 $7.5636
  • 800 $6.6737
  • 1,600 $6.0064
$6.0064 / $10.5900 Buy Now
DISTI # NTBG060N065SC1
Avnet Americas Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, D2PAK-7L - Tape and Reel (Alt: NTBG060N065SC1) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 800 $6.5195
  • 1,600 $6.3433
  • 3,200 $6.1671
  • 4,800 $5.9909
  • 6,400 $5.8147
  • 8,000 $5.6385
  • 80,000 $5.4623
$5.4623 / $6.5195 Buy Now
DISTI # 863-NTBG060N065SC1
Mouser Electronics MOSFET SIC MOS D2PAK-7L 650V RoHS: Compliant 572
  • 1 $10.5900
  • 10 $9.0800
  • 25 $8.2400
  • 100 $7.5700
  • 250 $7.1200
  • 500 $6.6800
  • 800 $6.0000
$6.0000 / $10.5900 Buy Now
Future Electronics N-Channel 650 V 46 A 44 mOhm 85 W SMT Silicon Carbide Mosfet - D2PAK-7L RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel 0
Reel
  • 800 $5.8900
$5.8900 Buy Now
DISTI # NTBG060N065SC1
Avnet Americas Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, D2PAK-7L - Tape and Reel (Alt: NTBG060N065SC1) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 800 $6.5195
  • 1,600 $6.3433
  • 3,200 $6.1671
  • 4,800 $5.9909
  • 6,400 $5.8147
  • 8,000 $5.6385
  • 80,000 $5.4623
$5.4623 / $6.5195 Buy Now
Ameya Holding Limited   Min Qty: 1 800
  • 1 $12.9383
  • 10 $12.2907
  • 100 $11.6771
  • 250 $11.0941
  • 500 $10.5380
$10.5380 / $12.9383 Buy Now
DISTI # NTBG060N065SC1
Avnet Americas Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, D2PAK-7L - Tape and Reel (Alt: NTBG060N065SC1) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 800 $6.5195
  • 1,600 $6.3433
  • 3,200 $6.1671
  • 4,800 $5.9909
  • 6,400 $5.8147
  • 8,000 $5.6385
  • 80,000 $5.4623
$5.4623 / $6.5195 Buy Now
DISTI # NTBG060N065SC1
Avnet Silica (Alt: NTBG060N065SC1) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 2 Weeks, 4 Days Silica - 0
Buy Now
DISTI # NTBG060N065SC1
EBV Elektronik (Alt: NTBG060N065SC1) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 2 Weeks, 5 Days EBV - 3200
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 800 1600
  • 800 $8.1300
  • 1,600 $7.5700
$7.5700 / $8.1300 Buy Now
Wuhan P&S - Min Qty: 1 495
  • 1 $18.2400
  • 100 $11.6500
  • 500 $9.6000
  • 1,000 $8.8300
$8.8300 / $18.2400 Buy Now

Part Details for NTBG060N065SC1

NTBG060N065SC1 CAD Models

NTBG060N065SC1 Part Data Attributes

NTBG060N065SC1 onsemi
Buy Now Datasheet
Compare Parts:
NTBG060N065SC1 onsemi Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, D2PAK-7L, 800-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Package Description D2PAK-7
Manufacturer Package Code 418BJ
Reach Compliance Code compliant
ECCN Code EAR99
Date Of Intro 2020-04-06
Samacsys Manufacturer onsemi
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 57.5 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 10.18 pF
JEDEC-95 Code TO-263CB
JESD-30 Code R-PSSO-G7
Number of Elements 1
Number of Terminals 7
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 344 W
Pulsed Drain Current-Max (IDM) 231 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON CARBIDE

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