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Transistors / Power Field-Effect Transistors / NTBG060N090SC1
Datasheets
NTBG060N090SC1 by: onsemi

Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L, 800-REEL

Part Details for NTBG060N090SC1 by onsemi

Overview of NTBG060N090SC1 by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for NTBG060N090SC1

Part # Distributor Description Stock Price Buy
DISTI # 5556-NTBG060N090SC1CT-ND
DigiKey MOSFET N-CH 900V 5.8/44A D2PAK-7 Min Qty: 1 Lead time: 17 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 774
In Stock
  • 1 $11.8200
  • 10 $10.4170
  • 100 $9.0094
  • 800 $8.1647
$8.1647 / $11.8200 Buy Now
DISTI # NTBG060N090SC1
Avnet Americas Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L - Tape and Reel (Alt: NTBG060N090SC1) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 800 $8.2512
  • 1,600 $8.0281
  • 3,200 $7.8051
  • 4,800 $7.5821
  • 6,400 $7.3591
  • 8,000 $7.1361
  • 80,000 $6.9131
$6.9131 / $8.2512 Buy Now
DISTI # 91AH8446
Avnet Americas Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L - Bulk (Alt: 91AH8446) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 11 Weeks, 1 Days Container: Bulk 64 Partner Stock
  • 1 $15.3500
  • 10 $13.8600
  • 25 $13.3200
  • 50 $12.7800
  • 100 $12.2400
$12.2400 / $15.3500 Buy Now
DISTI # 863-NTBG060N090SC1
Mouser Electronics MOSFET SIC MOS 60MOHM 900V RoHS: Compliant 1498
  • 1 $11.7100
  • 10 $10.4200
  • 25 $10.3500
  • 50 $10.1500
  • 100 $8.5600
  • 250 $8.5500
  • 500 $8.5200
  • 800 $7.4800
$7.4800 / $11.7100 Buy Now
Future Electronics 900V,44A,60MOHM, D2PAK7 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 35
  • 1 $9.6600
  • 5 $9.5500
  • 25 $9.4400
  • 100 $9.3400
  • 250 $9.2000
$9.2000 / $9.6600 Buy Now
Future Electronics 900 V 5.8 A 3.6 W Surface Mount Silicon Carbide (SiC) MOSFET - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel 0
Reel
  • 800 $7.3400
$7.3400 Buy Now
Future Electronics 900 V 5.8 A 3.6 W Surface Mount Silicon Carbide (SiC) MOSFET - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel 0
Reel
  • 800 $7.3400
$7.3400 Buy Now
DISTI # NTBG060N090SC1
Avnet Americas Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L - Tape and Reel (Alt: NTBG060N090SC1) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 800 $8.2512
  • 1,600 $8.0281
  • 3,200 $7.8051
  • 4,800 $7.5821
  • 6,400 $7.3591
  • 8,000 $7.1361
  • 80,000 $6.9131
$6.9131 / $8.2512 Buy Now
DISTI # 91AH8446
Avnet Americas Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L - Bulk (Alt: 91AH8446) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 11 Weeks, 1 Days Container: Bulk 64 Partner Stock
  • 1 $15.3500
  • 10 $13.8600
  • 25 $13.3200
  • 50 $12.7800
  • 100 $12.2400
$12.2400 / $15.3500 Buy Now
DISTI # NTBG060N090SC1
Avnet Americas Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L - Tape and Reel (Alt: NTBG060N090SC1) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 800 $8.2512
  • 1,600 $8.0281
  • 3,200 $7.8051
  • 4,800 $7.5821
  • 6,400 $7.3591
  • 8,000 $7.1361
  • 80,000 $6.9131
$6.9131 / $8.2512 Buy Now
DISTI # 91AH8446
Avnet Americas Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L - Bulk (Alt: 91AH8446) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 11 Weeks, 1 Days Container: Bulk 64 Partner Stock
  • 1 $15.3500
  • 10 $13.8600
  • 25 $13.3200
  • 50 $12.7800
  • 100 $12.2400
$12.2400 / $15.3500 Buy Now
DISTI # NTBG060N090SC1
Avnet Asia Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L (Alt: NTBG060N090SC1) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days 64
  • 800 $2.0421
  • 1,600 $2.0400
$2.0400 / $2.0421 Buy Now
DISTI # NTBG060N090SC1
Avnet Silica Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L (Alt: NTBG060N090SC1) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 2 Weeks, 4 Days Silica - 0
Buy Now
DISTI # NTBG060N090SC1
EBV Elektronik Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L (Alt: NTBG060N090SC1) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 2 Weeks, 5 Days EBV - 800
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 1 28
  • 11 $13.1400
  • 28 $12.2700
$12.2700 / $13.1400 Buy Now
Wuhan P&S - Min Qty: 1 646
  • 1 $23.7300
  • 100 $15.1500
  • 500 $12.4900
  • 1,000 $11.4900
$11.4900 / $23.7300 Buy Now

Part Details for NTBG060N090SC1

NTBG060N090SC1 CAD Models

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NTBG060N090SC1 Part Data Attributes

Parametric Data
NTBG060N090SC1 onsemi
Buy Now Datasheet
Compare Parts:
NTBG060N090SC1 onsemi Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L, 800-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Manufacturer Package Code 418BJ
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 162 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 900 V
Drain Current-Max (ID) 44 A
Drain-source On Resistance-Max 0.084 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 12 pF
JEDEC-95 Code TO-263CB
JESD-30 Code R-PSSO-G7
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 7
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 211 W
Pulsed Drain Current-Max (IDM) 176 A
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE
Turn-off Time-Max (toff) 94 ns
Turn-on Time-Max (ton) 106 ns

Alternate Parts for NTBG060N090SC1

This table gives cross-reference parts and alternative options found for NTBG060N090SC1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTBG060N090SC1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NVBG060N090SC1 Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 60 mΩ, 900 V, M2, D2PAK−7L Silicon Carbide MOSFET, N?Channel, 900 V, 60 m?, D2PAK?7L, 800-REEL, Automotive Qualified onsemi NTBG060N090SC1 vs NVBG060N090SC1

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