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Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L, 800-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
5556-NTBG080N120SC1CT-ND
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DigiKey | SICFET N-CH 1200V 30A D2PAK-7 Min Qty: 1 Lead time: 17 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
759 In Stock |
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$7.7840 / $11.2700 | Buy Now |
DISTI #
NTBG080N120SC1
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Avnet Americas | Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L - Tape and Reel (Alt: NTBG080N120SC1) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
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$6.5907 / $7.8663 | Buy Now |
DISTI #
91AH8447
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Avnet Americas | Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L - Bulk (Alt: 91AH8447) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 18 Weeks, 3 Days Container: Bulk | 55 Partner Stock |
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$7.1900 | Buy Now |
DISTI #
863-NTBG080N120SC1
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Mouser Electronics | MOSFET SIC MOS D2PAK-7L 80MOHM 1200V RoHS: Compliant | 973 |
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$7.9400 / $10.8000 | Buy Now |
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Future Electronics | Single N-Channel 1200 V 30 A 179 W Surface Mount SiC Power Mosfet - D2PAK-7L RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 | 60 |
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$7.0500 / $7.3700 | Buy Now |
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Future Electronics | Single N-Channel 1200 V 30 A 179 W Surface Mount SiC Power Mosfet - D2PAK-7L RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 | 50 |
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$7.0500 / $7.4100 | Buy Now |
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Future Electronics | Single N-Channel 1200 V 30 A 179 W Surface Mount SiC Power Mosfet - D2PAK-7L RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$7.0500 | Buy Now |
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Future Electronics | Single N-Channel 1200 V 30 A 179 W Surface Mount SiC Power Mosfet - D2PAK-7L RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$7.0500 | Buy Now |
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Bristol Electronics | 1380 |
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RFQ | ||
DISTI #
NTBG080N120SC1
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Avnet Americas | Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L - Tape and Reel (Alt: NTBG080N120SC1) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
|
$6.5907 / $7.8663 | Buy Now |
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NTBG080N120SC1
onsemi
Buy Now
Datasheet
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Compare Parts:
NTBG080N120SC1
onsemi
Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L, 800-REEL
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Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Package Description | D2PAK-7 | |
Manufacturer Package Code | 418BJ | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 17 Weeks | |
Date Of Intro | 2018-08-09 | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 171 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1200 V | |
Drain Current-Max (ID) | 30 A | |
Drain-source On Resistance-Max | 0.11 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 7.9 pF | |
JEDEC-95 Code | TO-263CB | |
JESD-30 Code | R-PSSO-G7 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 7 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 179 W | |
Pulsed Drain Current-Max (IDM) | 110 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON CARBIDE | |
Turn-off Time-Max (toff) | 52 ns | |
Turn-on Time-Max (ton) | 44 ns |