Datasheets
NTBG080N120SC1 by: onsemi

Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L, 800-REEL

Part Details for NTBG080N120SC1 by onsemi

Overview of NTBG080N120SC1 by onsemi

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Price & Stock for NTBG080N120SC1

Part # Distributor Description Stock Price Buy
DISTI # 5556-NTBG080N120SC1CT-ND
DigiKey SICFET N-CH 1200V 30A D2PAK-7 Min Qty: 1 Lead time: 17 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 759
In Stock
  • 1 $11.2700
  • 10 $9.9310
  • 100 $8.5892
  • 800 $7.7840
$7.7840 / $11.2700 Buy Now
DISTI # NTBG080N120SC1
Avnet Americas Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L - Tape and Reel (Alt: NTBG080N120SC1) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 800 $7.8663
  • 1,600 $7.6537
  • 3,200 $7.4411
  • 4,800 $7.2285
  • 6,400 $7.0159
  • 8,000 $6.8033
  • 80,000 $6.5907
$6.5907 / $7.8663 Buy Now
DISTI # 91AH8447
Avnet Americas Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L - Bulk (Alt: 91AH8447) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 18 Weeks, 3 Days Container: Bulk 55 Partner Stock
  • 1 $7.1900
$7.1900 Buy Now
DISTI # 863-NTBG080N120SC1
Mouser Electronics MOSFET SIC MOS D2PAK-7L 80MOHM 1200V RoHS: Compliant 973
  • 1 $10.8000
  • 10 $9.6000
  • 25 $9.5700
  • 100 $8.5900
  • 250 $8.5500
  • 500 $8.3500
  • 800 $7.9400
$7.9400 / $10.8000 Buy Now
Future Electronics Single N-Channel 1200 V 30 A 179 W Surface Mount SiC Power Mosfet - D2PAK-7L RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 60
  • 1 $7.3700
  • 10 $7.2900
  • 30 $7.2300
  • 125 $7.1600
  • 300 $7.0500
$7.0500 / $7.3700 Buy Now
Future Electronics Single N-Channel 1200 V 30 A 179 W Surface Mount SiC Power Mosfet - D2PAK-7L RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 50
  • 1 $7.4100
  • 5 $7.3200
  • 30 $7.2300
  • 100 $7.1700
  • 300 $7.0500
$7.0500 / $7.4100 Buy Now
Future Electronics Single N-Channel 1200 V 30 A 179 W Surface Mount SiC Power Mosfet - D2PAK-7L RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel 0
Reel
  • 800 $7.0500
$7.0500 Buy Now
Future Electronics Single N-Channel 1200 V 30 A 179 W Surface Mount SiC Power Mosfet - D2PAK-7L RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel 0
Reel
  • 800 $7.0500
$7.0500 Buy Now
Bristol Electronics   1380
RFQ
DISTI # NTBG080N120SC1
Avnet Americas Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L - Tape and Reel (Alt: NTBG080N120SC1) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 800 $7.8663
  • 1,600 $7.6537
  • 3,200 $7.4411
  • 4,800 $7.2285
  • 6,400 $7.0159
  • 8,000 $6.8033
  • 80,000 $6.5907
$6.5907 / $7.8663 Buy Now
DISTI # 91AH8447
Avnet Americas Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L - Bulk (Alt: 91AH8447) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 18 Weeks, 3 Days Container: Bulk 55 Partner Stock
  • 1 $7.1900
$7.1900 Buy Now
Ameya Holding Limited   Min Qty: 800 760
  • 800 $10.6847
  • 4,000 $10.4710
$10.4710 / $10.6847 Buy Now
DISTI # NTBG080N120SC1
Avnet Americas Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L - Tape and Reel (Alt: NTBG080N120SC1) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 800 $7.8663
  • 1,600 $7.6537
  • 3,200 $7.4411
  • 4,800 $7.2285
  • 6,400 $7.0159
  • 8,000 $6.8033
  • 80,000 $6.5907
$6.5907 / $7.8663 Buy Now
DISTI # 91AH8447
Avnet Americas Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L - Bulk (Alt: 91AH8447) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 18 Weeks, 3 Days Container: Bulk 55 Partner Stock
  • 1 $7.1900
$7.1900 Buy Now
DISTI # SMC-NTBG080N120SC1
Sensible Micro Corporation AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 1380
RFQ
Chip 1 Exchange INSTOCK 9959
RFQ
DISTI # NTBG080N120SC1
Avnet Silica Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L (Alt: NTBG080N120SC1) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 2 Weeks, 4 Days Silica - 0
Buy Now
DISTI # NTBG080N120SC1
EBV Elektronik Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L (Alt: NTBG080N120SC1) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 2 Weeks, 5 Days EBV - 0
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 1 128
  • 15 $9.7400
  • 128 $9.0900
$9.0900 / $9.7400 Buy Now
Wuhan P&S 1200V, 110m��, 30A, N�\\Channel Silicon Carbide MOSFET Min Qty: 1 7200
  • 1 $21.8900
  • 100 $13.9700
  • 500 $11.5200
  • 1,000 $10.5900
$10.5900 / $21.8900 Buy Now

Part Details for NTBG080N120SC1

NTBG080N120SC1 CAD Models

NTBG080N120SC1 Part Data Attributes

NTBG080N120SC1 onsemi
Buy Now Datasheet
Compare Parts:
NTBG080N120SC1 onsemi Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L, 800-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Package Description D2PAK-7
Manufacturer Package Code 418BJ
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 17 Weeks
Date Of Intro 2018-08-09
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 171 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.11 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 7.9 pF
JEDEC-95 Code TO-263CB
JESD-30 Code R-PSSO-G7
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 7
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 179 W
Pulsed Drain Current-Max (IDM) 110 A
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE
Turn-off Time-Max (toff) 52 ns
Turn-on Time-Max (ton) 44 ns

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