Part Details for NTBG160N120SC1 by onsemi
Overview of NTBG160N120SC1 by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Space Technology
Aerospace and Defense
Price & Stock for NTBG160N120SC1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
5556-NTBG160N120SC1CT-ND
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DigiKey | SICFET N-CH 1200V 19.5A D2PAK Min Qty: 1 Lead time: 17 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
423 In Stock |
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$4.5962 / $8.1000 | Buy Now |
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DISTI #
NTBG160N120SC1
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Avnet Americas | Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L - Tape and Reel (Alt: NTBG160N120SC1) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
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$4.1799 / $4.9889 | Buy Now |
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DISTI #
91AH8448
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Avnet Americas | Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L - Bulk (Alt: 91AH8448) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 14 Weeks, 1 Days Container: Bulk | 765 Partner Stock |
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$4.5600 | Buy Now |
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DISTI #
863-NTBG160N120SC1
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Mouser Electronics | MOSFET SIC MOS D2PAK-7L 160MOHM 1200V RoHS: Compliant | 1382 |
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$4.4100 / $8.1000 | Buy Now |
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Future Electronics | NTBG160 Series Single Channel 1200 V Sic Power Mosfet- D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 | 35 |
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$4.3300 / $5.0500 | Buy Now |
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Future Electronics | NTBG160 Series Single Channel 1200 V Sic Power Mosfet- D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 | 30 |
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$4.3300 / $5.0500 | Buy Now |
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Future Electronics | NTBG160 Series Single Channel 1200 V Sic Power Mosfet- D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$4.3300 | Buy Now |
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Future Electronics | NTBG160 Series Single Channel 1200 V Sic Power Mosfet- D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$4.3300 | Buy Now |
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Future Electronics | NTBG160 Series Single Channel 1200 V Sic Power Mosfet- D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$4.3300 | Buy Now |
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Rochester Electronics | NTBG160N120SC1 - Silicon Carbide MOSFET, N-Channel, 1200 V, D2PAK-7L RoHS: Compliant Status: Active Min Qty: 1 | 5660 |
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$4.1800 / $4.9200 | Buy Now |
Part Details for NTBG160N120SC1
NTBG160N120SC1 CAD Models
NTBG160N120SC1 Part Data Attributes
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NTBG160N120SC1
onsemi
Buy Now
Datasheet
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Compare Parts:
NTBG160N120SC1
onsemi
Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L, 800-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | D2PAK-7 | |
| Manufacturer Package Code | 418BJ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 24 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 120 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 19.5 A | |
| Drain-source On Resistance-Max | 0.224 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5.87 pF | |
| JEDEC-95 Code | TO-263CB | |
| JESD-30 Code | R-PSSO-G7 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 7 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 136 W | |
| Pulsed Drain Current-Max (IDM) | 78 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE | |
| Turn-off Time-Max (toff) | 42 ns | |
| Turn-on Time-Max (ton) | 40 ns |
Alternate Parts for NTBG160N120SC1
This table gives cross-reference parts and alternative options found for NTBG160N120SC1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTBG160N120SC1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NVBG160N120SC1 | Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mohm, 1200 V, M1, D2PAK−7L, 800-REEL, Automotive Qualified | onsemi | NTBG160N120SC1 vs NVBG160N120SC1 |