Part Details for NTBGS004N10G by onsemi
Overview of NTBGS004N10G by onsemi
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
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Applications
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for NTBGS004N10G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
50AJ5881
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Newark | Mosfet, N-Ch, 100V, 203A, To-263 Rohs Compliant: Yes |Onsemi NTBGS004N10G Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 1598 |
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$4.4200 / $7.5700 | Buy Now |
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DISTI #
488-NTBGS004N10GCT-ND
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DigiKey | POWER MOSFET 203 AMPS, 100 VOLTS Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
693 In Stock |
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$3.5125 / $6.6100 | Buy Now |
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DISTI #
NTBGS004N10G
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Avnet Americas | Transistor Power MOSFET N-Channel 100V 203A 7-Pin D2PAK T/R - Tape and Reel (Alt: NTBGS004N10G) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$3.4090 / $4.0688 | Buy Now |
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DISTI #
863-NTBGS004N10G
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Mouser Electronics | MOSFET 100V MVSOA IN D2PAK-7L PACKAGE RoHS: Compliant | 2375 |
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$3.7400 / $6.6000 | Buy Now |
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Future Electronics | NTBGS004N10G Series N-Channel 100 V 4.1 mOhm Power MOSFET - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$3.6700 | Buy Now |
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Future Electronics | NTBGS004N10G Series N-Channel 100 V 4.1 mOhm Power MOSFET - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 0Reel |
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$3.6700 | Buy Now |
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DISTI #
NTBGS004N10G
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Avnet Americas | Transistor Power MOSFET N-Channel 100V 203A 7-Pin D2PAK T/R - Tape and Reel (Alt: NTBGS004N10G) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$3.4090 / $4.0688 | Buy Now |
|
DISTI #
NTBGS004N10G
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Avnet Americas | Transistor Power MOSFET N-Channel 100V 203A 7-Pin D2PAK T/R - Tape and Reel (Alt: NTBGS004N10G) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$3.4090 / $4.0688 | Buy Now |
|
DISTI #
NTBGS004N10G
|
Avnet Asia | Transistor Power MOSFET N-Channel 100V 203A 7-Pin D2PAK T/R (Alt: NTBGS004N10G) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 20 Weeks, 0 Days | 0 |
|
$3.2344 / $3.6174 | Buy Now |
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DISTI #
NTBGS004N10G
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EBV Elektronik | Transistor Power MOSFET N-Channel 100V 203A 7-Pin D2PAK T/R (Alt: NTBGS004N10G) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 3 Weeks, 1 Days | EBV - 0 |
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Buy Now |
Part Details for NTBGS004N10G
NTBGS004N10G CAD Models
NTBGS004N10G Part Data Attributes
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NTBGS004N10G
onsemi
Buy Now
Datasheet
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Compare Parts:
NTBGS004N10G
onsemi
Power MOSFET 203 Amps, 100 Volts N-Channel Enhancement - Mode D2PAK 7L, 800-REEL
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | D2PAK-7/6 | |
| Manufacturer Package Code | 418AY | |
| Reach Compliance Code | compliant | |
| Factory Lead Time | 40 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 561 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 203 A | |
| Drain-source On Resistance-Max | 0.0041 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 165 pF | |
| JEDEC-95 Code | TO-263CB | |
| JESD-30 Code | R-PSSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 340 W | |
| Pulsed Drain Current-Max (IDM) | 2983 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |