Part Details for NTBLS1D7N10MCTXG by onsemi
Overview of NTBLS1D7N10MCTXG by onsemi
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- Number of Functional Equivalents:
- Part Data Attributes
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for NTBLS1D7N10MCTXG
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
488-NTBLS1D7N10MCTXGCT-ND
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DigiKey | MOSFET, POWER, SINGLE N-CHANNEL, Min Qty: 1 Lead time: 24 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1945 In Stock |
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$3.3626 / $6.3300 | Buy Now |
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DISTI #
NTBLS1D7N10MCTXG
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Avnet Americas | - Tape and Reel (Alt: NTBLS1D7N10MCTXG) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 24 Weeks, 0 Days Container: Reel | 0 |
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$3.5267 / $3.9478 | Buy Now |
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DISTI #
863-NTBLS1D7N10MCTXG
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Mouser Electronics | MOSFET PTNG 100V STD TOLL | 2000 |
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$3.3600 / $6.3200 | Buy Now |
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Rochester Electronics | NTBLS1D7N10MC - MOSFET, Power, Single N-Channel, 100V, TOLL Package RoHS: Compliant Status: Active Min Qty: 1 | 36210 |
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$3.2600 / $3.8400 | Buy Now |
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DISTI #
NTBLS1D7N10MCTXG
|
Avnet Americas | - Tape and Reel (Alt: NTBLS1D7N10MCTXG) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 24 Weeks, 0 Days Container: Reel | 0 |
|
$3.5267 / $3.9478 | Buy Now |
|
DISTI #
NTBLS1D7N10MCTXG
|
Avnet Americas | - Tape and Reel (Alt: NTBLS1D7N10MCTXG) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 24 Weeks, 0 Days Container: Reel | 0 |
|
$3.5267 / $3.9478 | Buy Now |
|
DISTI #
NTBLS1D7N10MCTXG
|
Avnet Asia | (Alt: NTBLS1D7N10MCTXG) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 24 Weeks, 0 Days | 0 |
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RFQ |
Part Details for NTBLS1D7N10MCTXG
NTBLS1D7N10MCTXG CAD Models
NTBLS1D7N10MCTXG Part Data Attributes
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NTBLS1D7N10MCTXG
onsemi
Buy Now
Datasheet
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Compare Parts:
NTBLS1D7N10MCTXG
onsemi
MOSFET, Power, Single N-Channel, 100V, TOLL Package, 2000-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Manufacturer Package Code | 100CU | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 606 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 272 A | |
| Drain-source On Resistance-Max | 0.0018 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 79 pF | |
| JEDEC-95 Code | MO-299A | |
| JESD-30 Code | R-PSSO-F8 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 295 W | |
| Pulsed Drain Current-Max (IDM) | 2137 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |