Part Details for NTBS2D7N06M7 by onsemi
Overview of NTBS2D7N06M7 by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for NTBS2D7N06M7
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
NTBS2D7N06M7OSCT-ND
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DigiKey | MOSFET N-CH 60V 110A D2PAK-3 Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1178 In Stock |
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$3.6584 / $6.8800 | Buy Now |
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DISTI #
NTBS2D7N06M7
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Avnet Americas | Transistor MOSFET N-CH 60V 110A 3-Pin TO-263 T/R - Tape and Reel (Alt: NTBS2D7N06M7) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 20 Weeks, 0 Days Container: Reel | 7200 Factory Stock |
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$3.5506 / $4.2378 | Buy Now |
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DISTI #
NTBS2D7N06M7
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Avnet Americas | Transistor MOSFET N-CH 60V 110A 3-Pin TO-263 T/R - Tape and Reel (Alt: NTBS2D7N06M7) RoHS: Compliant Min Qty: 410 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 7200 Partner Stock |
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$1.5128 / $1.8056 | Buy Now |
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DISTI #
863-NTBS2D7N06M7
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Mouser Electronics | MOSFET NMOS 60V 2.7 MOHM RoHS: Compliant | 332 |
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$3.8900 / $5.3900 | Buy Now |
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Rochester Electronics | Power MOSFET, N-Channel, Standard Gate, 60 V, 110 A RoHS: Compliant Status: Active Min Qty: 1 | 1543 |
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$3.5500 / $4.1800 | Buy Now |
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DISTI #
NTBS2D7N06M7
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Avnet Americas | Transistor MOSFET N-CH 60V 110A 3-Pin TO-263 T/R - Tape and Reel (Alt: NTBS2D7N06M7) RoHS: Compliant Min Qty: 410 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 7200 Partner Stock |
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$1.5128 / $1.8056 | Buy Now |
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DISTI #
NTBS2D7N06M7
|
Avnet Americas | Transistor MOSFET N-CH 60V 110A 3-Pin TO-263 T/R - Tape and Reel (Alt: NTBS2D7N06M7) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 20 Weeks, 0 Days Container: Reel | 7200 Factory Stock |
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$3.5506 / $4.2378 | Buy Now |
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Ameya Holding Limited | Min Qty: 201 | 1570 |
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$7.4080 / $7.6371 | Buy Now |
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DISTI #
NTBS2D7N06M7
|
Avnet Americas | Transistor MOSFET N-CH 60V 110A 3-Pin TO-263 T/R - Tape and Reel (Alt: NTBS2D7N06M7) RoHS: Compliant Min Qty: 410 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 7200 Partner Stock |
|
$1.5128 / $1.8056 | Buy Now |
|
DISTI #
NTBS2D7N06M7
|
Avnet Americas | Transistor MOSFET N-CH 60V 110A 3-Pin TO-263 T/R - Tape and Reel (Alt: NTBS2D7N06M7) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 20 Weeks, 0 Days Container: Reel | 7200 Factory Stock |
|
$3.5506 / $4.2378 | Buy Now |
Part Details for NTBS2D7N06M7
NTBS2D7N06M7 CAD Models
NTBS2D7N06M7 Part Data Attributes
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NTBS2D7N06M7
onsemi
Buy Now
Datasheet
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Compare Parts:
NTBS2D7N06M7
onsemi
Power MOSFET, N-Channel, Standard Gate, 60 V, 110 A, 2.7 mΩ Power MOSFET, N-Channel, Standard Gate, 60 V, 110 A, 2.7 mΩ, 800-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Manufacturer Package Code | 418AJ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 193 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 110 A | |
| Drain-source On Resistance-Max | 0.0027 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 176 W | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 64 ns | |
| Turn-on Time-Max (ton) | 115 ns |