Part Details for NTD4854N-1G by onsemi
Overview of NTD4854N-1G by onsemi
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for NTD4854N-1G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
74AK0829
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Newark | Ntd4854N-1G, Single Mosfets |Onsemi NTD4854N-1G Min Qty: 790 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.6070 / $0.6580 | Buy Now |
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Rochester Electronics | NTD4854N - 15.7A, 25V, 0.0047ohm, N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 1800 |
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$0.3964 / $0.4664 | Buy Now |
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DISTI #
4184755
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Farnell | NTD4854N-1G, SINGLE MOSFETS RoHS: Compliant Min Qty: 825 Lead time: 3 Weeks, 1 Days Container: Each | 1800 |
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$0.4568 | Buy Now |
Part Details for NTD4854N-1G
NTD4854N-1G CAD Models
NTD4854N-1G Part Data Attributes:
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NTD4854N-1G
onsemi
Buy Now
Datasheet
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Compare Parts:
NTD4854N-1G
onsemi
Power MOSFET 25 V, 124 A, Single N-Channel, DPAK INSERTION MOUNT, 75-TUBE
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DPAK INSERTION MOUNT | |
| Package Description | LEAD FREE, CASE 369D-01, IPAK-3 | |
| Pin Count | 4 | |
| Manufacturer Package Code | 369 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 338 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain Current-Max (ID) | 15.7 A | |
| Drain-source On Resistance-Max | 0.0047 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 93.75 W | |
| Pulsed Drain Current-Max (IDM) | 225 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |