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Single N−Channel Power MOSFET 40V, 160A, 2.1mΩ 40 V, 2.2 m?, 160 A, Single N−Channel DPAK, 2500-REEL, Automotive Qualified
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
V72:2272_21690264
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Arrow Electronics | NTD5C434NT4G ON Semiconductor Transistors MOSFETs N-CH 40V 33A Automotive 3-Pin(2+Tab) DPAK T/R - Arrow.com Min Qty: 1 Package Multiple: 1 Lead time: 99 Weeks Date Code: 1834 Container: Cut Strips | Americas - 1874 |
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$1.1177 / $4.2691 | Buy Now |
DISTI #
30311773
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Verical | NTD5C434NT4G ON Semiconductor Transistors MOSFETs N-CH 40V 33A Automotive 3-Pin(2+Tab) DPAK T/R - Arrow.com Min Qty: 2 Package Multiple: 1 Date Code: 1834 | Americas - 1874 |
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$1.1177 / $1.2507 | Buy Now |
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Rochester Electronics | NTD5C434N - NTD5C434 - Single N-Channel Power MOSFET 40V, 160A RoHS: Compliant Status: Obsolete Min Qty: 1 | 5000 |
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$4.3200 / $5.0800 | Buy Now |
DISTI #
NTD5C434NT4G
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TME | Transistor: N-MOSFET, unipolar, 40V, 23A, Idm: 900A, 2.4W, DPAK Min Qty: 1 | 0 |
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$5.4500 / $8.1800 | RFQ |
DISTI #
NTD5C434NT4G
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Avnet Silica | (Alt: NTD5C434NT4G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 53 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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Flip Electronics | Stock, ship today | 266 |
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$1.5000 | RFQ |
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NTD5C434NT4G
onsemi
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Datasheet
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Compare Parts:
NTD5C434NT4G
onsemi
Single N−Channel Power MOSFET 40V, 160A, 2.1mΩ 40 V, 2.2 m?, 160 A, Single N−Channel DPAK, 2500-REEL, Automotive Qualified
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Pbfree Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ONSEMI | |
Manufacturer Package Code | 369C | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 420 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 160 A | |
Drain-source On Resistance-Max | 0.0021 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 71 pF | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 120 W | |
Pulsed Drain Current-Max (IDM) | 900 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Element Material | SILICON |