Part Details for NTE465 by NTE Electronics Inc
Overview of NTE465 by NTE Electronics Inc
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
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Price & Stock for NTE465
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
29C4610
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Newark | N Channel Mosfet, 25V, 3Ma, To-72, Channel Type:N Channel, Drain Source Voltage Vds:25V, Continuous Drain Current Id:3Ma, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V, Msl:- Rohs Compliant: Yes |Nte Electronics NTE465 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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Onlinecomponents.com | Mosfet N-channel 25V Idss=10na TO-72 Case For Switching Applications RoHS: Compliant |
42 In Stock |
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$9.4000 / $13.4800 | Buy Now |
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DISTI #
60869021
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Verical | Trans MOSFET N-CH Si 25V 4-Pin TO-72 Min Qty: 5 Package Multiple: 5 Date Code: 2126 | Americas - 40 |
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$14.0025 / $17.3711 | Buy Now |
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Bristol Electronics | 12 |
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RFQ | ||
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Bristol Electronics | Min Qty: 1 | 3 |
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$9.0000 | Buy Now |
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Quest Components | 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 8 |
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$10.5525 / $14.0700 | Buy Now |
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Quest Components | 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 5 |
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$7.8750 / $10.5000 | Buy Now |
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Quest Components | 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 2 |
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$12.0000 | Buy Now |
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Quest Components | 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 9 |
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$12.4180 / $13.9703 | Buy Now |
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Quest Components | 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 1 |
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$15.7500 / $16.8750 | Buy Now |
Part Details for NTE465
NTE465 CAD Models
NTE465 Part Data Attributes
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NTE465
NTE Electronics Inc
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Datasheet
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NTE465
NTE Electronics Inc
Small Signal Field-Effect Transistor, 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NTE ELECTRONICS INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain Current-Max (ID) | 0.03 A | |
| Drain-source On Resistance-Max | 300 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 1.3 pF | |
| JESD-30 Code | O-MBCY-W4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.3 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |