-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for NTH4L160N120SC1 by onsemi
Overview of NTH4L160N120SC1 by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for NTH4L160N120SC1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
91AH8493
|
Newark | Sic Mosfet, N-Ch, 20V, 17.3A, To-247, Mosfet Module Configuration:Single, Channel Type:N Channel, Continuous Drain Current Id:17.3A, Drain Source Voltage Vds:1.2Kv, No. Of Pins:4Pins, Rds(On) Test Voltage:20V, Power Dissipation:111W Rohs Compliant: Yes |Onsemi NTH4L160N120SC1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 90 |
|
$4.1600 | Buy Now |
|
DISTI #
74AH4844
|
Newark | Mosfet, N-Ch, 1.2Kv, 17.3A, To-247 Rohs Compliant: Yes |Onsemi NTH4L160N120SC1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
|
$6.2100 / $9.0200 | Buy Now |
|
DISTI #
5556-NTH4L160N120SC1-ND
|
DigiKey | SICFET N-CH 1200V 17.3A TO247 Min Qty: 1 Lead time: 17 Weeks Container: Tube |
1111 In Stock |
|
$4.5165 / $8.5000 | Buy Now |
|
DISTI #
NTH4L160N120SC1
|
Avnet Americas | Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L - Rail/Tube (Alt: NTH4L160N120SC1) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 17 Weeks, 0 Days Container: Tube | 0 |
|
$4.3834 / $5.2318 | Buy Now |
|
DISTI #
91AH8493
|
Avnet Americas | Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L - Bulk (Alt: 91AH8493) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 9 Weeks, 3 Days Container: Bulk | 90 Partner Stock |
|
$5.8900 / $8.2600 | Buy Now |
|
DISTI #
863-NTH4L160N120SC1
|
Mouser Electronics | MOSFET SIC MOS TO247-4L 1200V 160MOHM INDUSTRY PART RoHS: Compliant | 645 |
|
$4.5100 / $6.7200 | Buy Now |
|
|
Future Electronics | Single N-Channel 1200 V 17.3 A 111 W Silicon Carbide Power Mosfet - TO-247-4L RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 399Tube |
|
$4.4300 / $5.1700 | Buy Now |
|
|
Future Electronics | Single N-Channel 1200 V 17.3 A 111 W Silicon Carbide Power Mosfet - TO-247-4L RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 70Tube |
|
$4.4300 / $5.1700 | Buy Now |
|
|
Future Electronics | Single N-Channel 1200 V 17.3 A 111 W Silicon Carbide Power Mosfet - TO-247-4L RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 65Tube |
|
$4.4300 / $5.1700 | Buy Now |
|
|
Future Electronics | Single N-Channel 1200 V 17.3 A 111 W Silicon Carbide Power Mosfet - TO-247-4L RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 450 Container: Tube | 0Tube |
|
$4.4300 / $4.5500 | Buy Now |
Part Details for NTH4L160N120SC1
NTH4L160N120SC1 CAD Models
NTH4L160N120SC1 Part Data Attributes
|
|
NTH4L160N120SC1
onsemi
Buy Now
Datasheet
|
Compare Parts:
NTH4L160N120SC1
onsemi
Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L, 450-TUBE
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Manufacturer Package Code | 340CJ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 61 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 128 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 17.3 A | |
| Drain-source On Resistance-Max | 0.224 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 4.3 pF | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T4 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 111 W | |
| Pulsed Drain Current-Max (IDM) | 69 A | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE | |
| Turn-off Time-Max (toff) | 39 ns | |
| Turn-on Time-Max (ton) | 40 ns |