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Part Details for NTHL160N120SC1 by onsemi
Overview of NTHL160N120SC1 by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
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Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for NTHL160N120SC1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
91AH8489
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Newark | Sic Mosfet, N-Ch, 20V, 17A, To-247, Mosfet Module Configuration:Single, Channel Type:N Channel, Continuous Drain Current Id:17A, Drain Source Voltage Vds:1.2Kv, No. Of Pins:3Pins, Rds(On) Test Voltage:20V, Power Dissipation:119W Rohs Compliant: Yes |Onsemi NTHL160N120SC1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 71 |
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$4.6100 / $5.7600 | Buy Now |
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DISTI #
74AH4840
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Newark | Mosfet, N-Ch, 1.2Kv, 17A, To-247 Rohs Compliant: Yes |Onsemi NTHL160N120SC1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$5.4800 / $8.4100 | Buy Now |
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DISTI #
5556-NTHL160N120SC1-ND
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DigiKey | SICFET N-CH 1200V 17A TO247-3 Min Qty: 1 Lead time: 18 Weeks Container: Tube |
365 In Stock |
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$4.4154 / $8.3100 | Buy Now |
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DISTI #
NTHL160N120SC1
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Avnet Americas | Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L - Rail/Tube (Alt: NTHL160N120SC1) RoHS: Compliant Min Qty: 100 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube | 2250 Partner Stock |
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$6.2248 / $7.4296 | Buy Now |
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DISTI #
NTHL160N120SC1
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Avnet Americas | Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L - Rail/Tube (Alt: NTHL160N120SC1) RoHS: Not Compliant Min Qty: 450 Package Multiple: 450 Lead time: 18 Weeks, 0 Days Container: Tube | 2250 Factory Stock |
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$4.2853 / $5.1147 | Buy Now |
|
DISTI #
91AH8489
|
Avnet Americas | Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L - Bulk (Alt: 91AH8489) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks, 3 Days Container: Bulk | 71 Partner Stock |
|
$5.7500 / $8.0800 | Buy Now |
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DISTI #
863-NTHL160N120SC1
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Mouser Electronics | MOSFET SIC MOS TO247-3L 160MOHM 1200V RoHS: Compliant | 1617 |
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$4.4300 / $7.2800 | Buy Now |
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Future Electronics | Single N-Channel 1200 V 17 A 119 W Silicon Carbide Power Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 65Tube |
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$4.3500 / $5.0800 | Buy Now |
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Future Electronics | Single N-Channel 1200 V 17 A 119 W Silicon Carbide Power Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 30Tube |
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$4.3500 / $5.0800 | Buy Now |
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Future Electronics | Single N-Channel 1200 V 17 A 119 W Silicon Carbide Power Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 450 Container: Tube | 0Tube |
|
$4.3500 / $4.7800 | Buy Now |
Part Details for NTHL160N120SC1
NTHL160N120SC1 CAD Models
NTHL160N120SC1 Part Data Attributes
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NTHL160N120SC1
onsemi
Buy Now
Datasheet
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Compare Parts:
NTHL160N120SC1
onsemi
Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L, 450-TUBE
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Manufacturer Package Code | 340CX | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 63 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 128 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 17 A | |
| Drain-source On Resistance-Max | 0.224 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5 pF | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 119 W | |
| Pulsed Drain Current-Max (IDM) | 69 A | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE |