Datasheets
NTMFS1D15N03CGT1G by: onsemi

MOSFET, Power 30V N-Channel, SO8FL, 1500-REEL

Part Details for NTMFS1D15N03CGT1G by onsemi

Overview of NTMFS1D15N03CGT1G by onsemi

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for NTMFS1D15N03CGT1G

Part # Distributor Description Stock Price Buy
DISTI # 38AH7230
Newark Wide Soa/ Reel Rohs Compliant: Yes |Onsemi NTMFS1D15N03CGT1G Min Qty: 1500 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1,000 $1.1400
  • 2,500 $0.9190
  • 5,000 $0.8920
$0.8920 / $1.1400 Buy Now
DISTI # 488-NTMFS1D15N03CGT1GCT-ND
DigiKey MOSFET N-CH 30V 43A/245A 5DFN Min Qty: 1 Lead time: 25 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 1500
In Stock
  • 1 $2.0400
  • 10 $1.6970
  • 100 $1.3503
  • 500 $1.1426
  • 1,500 $0.9694
  • 3,000 $0.9210
  • 7,500 $0.8863
  • 10,500 $0.8570
$0.8570 / $2.0400 Buy Now
DISTI # NTMFS1D15N03CGT1G
Avnet Americas Transistor MOSFET N-Channel 30V 245A 5-Pin DFN T/R - Tape and Reel (Alt: NTMFS1D15N03CGT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 25 Weeks, 0 Days Container: Reel 0
  • 1,500 $1.0284
  • 3,000 $1.0010
  • 6,000 $0.9736
  • 9,000 $0.9461
  • 12,000 $0.9187
$0.9187 / $1.0284 Buy Now
DISTI # 863-NTMFS1D15N03CGTG
Mouser Electronics MOSFET WIDE SOA 0
  • 1 $2.0400
  • 10 $1.7000
  • 100 $1.3500
  • 250 $1.3400
  • 500 $1.1500
  • 1,500 $0.9690
  • 3,000 $0.8860
  • 9,000 $0.8570
$0.8570 / $2.0400 Order Now
DISTI # NTMFS1D15N03CGT1G
Avnet Americas Transistor MOSFET N-Channel 30V 245A 5-Pin DFN T/R - Tape and Reel (Alt: NTMFS1D15N03CGT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 25 Weeks, 0 Days Container: Reel 0
  • 1,500 $1.0284
  • 3,000 $1.0010
  • 6,000 $0.9736
  • 9,000 $0.9461
  • 12,000 $0.9187
$0.9187 / $1.0284 Buy Now
DISTI # NTMFS1D103CGT1G
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1500 0
  • 1,500 $0.8600
$0.8600 Buy Now
DISTI # NTMFS1D15N03CGT1G
Avnet Asia Transistor MOSFET N-Channel 30V 245A 5-Pin DFN T/R (Alt: NTMFS1D15N03CGT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 25 Weeks, 0 Days 0
  • 1,500 $1.4474
  • 3,000 $1.4286
  • 4,500 $1.4103
  • 7,500 $1.3924
  • 15,000 $1.3580
  • 37,500 $1.3253
  • 75,000 $1.2941
$1.2941 / $1.4474 Buy Now
DISTI # NTMFS1D15N03CGT1G
EBV Elektronik (Alt: NTMFS1D15N03CGT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 3 Weeks, 6 Days EBV - 0
Buy Now
DISTI # 3616389
Farnell MOSFET, N-CH, 30V, 245A, DFN RoHS: Compliant Min Qty: 1500 Lead time: 26 Weeks, 1 Days Container: Reel 0
  • 1,500 $1.6965
$1.6965 Buy Now
LCSC 30V 245A 0.92m10V20A 124W 2.2V160uA 1PCSNChannel DFN-5(5.9x4.9) MOSFETs ROHS 100
  • 1 $2.2680
  • 10 $2.1591
  • 30 $2.0949
  • 100 $1.9323
  • 500 $1.9024
  • 1,500 $1.8890
$1.8890 / $2.2680 Buy Now

Part Details for NTMFS1D15N03CGT1G

NTMFS1D15N03CGT1G CAD Models

NTMFS1D15N03CGT1G Part Data Attributes:

NTMFS1D15N03CGT1G onsemi
Buy Now Datasheet
Compare Parts:
NTMFS1D15N03CGT1G onsemi MOSFET, Power 30V N-Channel, SO8FL, 1500-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Manufacturer Package Code 488AA
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 77 Weeks
Date Of Intro 2019-09-13
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 354 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 245 A
Drain-source On Resistance-Max 0.00115 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 99 pF
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 124 W
Pulsed Drain Current-Max (IDM) 900 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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