Part Details for NTP6411ANG by onsemi
Overview of NTP6411ANG by onsemi
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Environmental Monitoring
Internet of Things (IoT)
Smart Cities
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Automotive
Consumer Electronics
Education and Research
Security and Surveillance
Aerospace and Defense
Healthcare
Robotics and Drones
Price & Stock for NTP6411ANG
| Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | 100 V, 72 A, 14 MILLI OHM, N-CHANNEL POWER MOSFET Power Field-Effect Transistor, 72A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | Europe - 200 |
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RFQ |
Part Details for NTP6411ANG
NTP6411ANG CAD Models
NTP6411ANG Part Data Attributes
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NTP6411ANG
onsemi
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Datasheet
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NTP6411ANG
onsemi
Power MOSFET 100V 77A 14 mOhm Single N-Channel TO-220, TO-220 3 LEAD STANDARD, 50-TUBE
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ON SEMICONDUCTOR | |
| Part Package Code | TO-220 3 LEAD STANDARD | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | 221A | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 470 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 72 A | |
| Drain-source On Resistance-Max | 0.014 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 217 W | |
| Pulsed Drain Current-Max (IDM) | 285 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for NTP6411ANG
This table gives cross-reference parts and alternative options found for NTP6411ANG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTP6411ANG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SSF1116A | Power Field-Effect Transistor, 75A I(D), 110V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3/2 | Suzhou Good-Ark Electronics Co Ltd | NTP6411ANG vs SSF1116A |
| SML10M19SVR | Power Field-Effect Transistor, 75A I(D), 100V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 | TT Electronics Resistors | NTP6411ANG vs SML10M19SVR |
| IRFB4610PBF | Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | Infineon Technologies AG | NTP6411ANG vs IRFB4610PBF |
| AUIRFB4610 | Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 | Infineon Technologies AG | NTP6411ANG vs AUIRFB4610 |
| IRFSL4610TRRPBF | Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN | Infineon Technologies AG | NTP6411ANG vs IRFSL4610TRRPBF |
| PSMN013-100PS,127 | PSMN013-100PS - N-channel 100V 13.9mΩ standard level MOSFET in TO220.@en-us TO-220 3-Pin | Nexperia | NTP6411ANG vs PSMN013-100PS,127 |
| NTP6412ANG | Single N-Channel Power MOSFET 100V, 58A, 18.2mΩ, TO-220 3 LEAD STANDARD, 50-TUBE | onsemi | NTP6411ANG vs NTP6412ANG |
| IRFS4610TRRPBF | Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | NTP6411ANG vs IRFS4610TRRPBF |
| APT10M19BVR | Power Field-Effect Transistor, 75A I(D), 100V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Microchip Technology Inc | NTP6411ANG vs APT10M19BVR |
| NTP6448ANG | 76A, 100V, 0.013ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, CASE 221A-09, 3 PIN | onsemi | NTP6411ANG vs NTP6448ANG |