Part Details for NTP6412ANG by onsemi
Overview of NTP6412ANG by onsemi
- Distributor Offerings: (15 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Telecommunications
Automotive
Price & Stock for NTP6412ANG
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
14AC4777
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Newark | Mosfet, N-Ch, 100V, 58A, To-220, Transistor Polarity:N Channel, Continuous Drain Current Id:58A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.0168Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Onsemi NTP6412ANG Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 247 |
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$1.1600 / $2.4200 | Buy Now |
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DISTI #
81AC9560
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Newark | Nfet To220 100V 72A 14Moh Rohs Compliant: Yes |Onsemi NTP6412ANG Min Qty: 750 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.9700 / $1.3100 | Buy Now |
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DISTI #
63R4589
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Newark | Mosfet Transistor, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:58A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Power Dissipation:167W Rohs Compliant: Yes |Onsemi NTP6412ANG Min Qty: 250 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$1.1300 / $1.7100 | Buy Now |
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DISTI #
NTP6412ANGOS-ND
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DigiKey | MOSFET N-CH 100V 58A TO220AB Min Qty: 1 Lead time: 15 Weeks Container: Tube |
71 In Stock |
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$0.9064 / $2.1600 | Buy Now |
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DISTI #
NTP6412ANG
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Avnet Americas | Trans MOSFET N-CH 100V 58A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: NTP6412ANG) RoHS: Compliant Min Qty: 700 Package Multiple: 50 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
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$0.8991 / $1.0732 | Buy Now |
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DISTI #
863-NTP6412ANG
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Mouser Electronics | MOSFET NFET TO220 100V 72A RoHS: Compliant | 1065 |
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$0.9060 / $2.1500 | Buy Now |
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Future Electronics | N-Channel 100 V 18.2 mOhm 167 W Flange Mount Power MOSFET - TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 50 Lead time: 15 Weeks Container: Tube | 0Tube |
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$0.9200 / $1.0900 | Buy Now |
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Future Electronics | N-Channel 100 V 18.2 mOhm 167 W Flange Mount Power MOSFET - TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 50 Lead time: 15 Weeks Container: Tube | 0Tube |
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$0.9200 / $1.0900 | Buy Now |
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Rochester Electronics | NTP6412AN - Power Field-Effect Transistor, 58A, 100V, 0.0182ohm, N-Channel, MOSFET, TO-220AB RoHS: Compliant Status: Active Min Qty: 1 | 8746 |
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$0.8988 / $1.0600 | Buy Now |
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DISTI #
NTP6412ANG
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 700 | 0 |
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$0.9100 | Buy Now |
Part Details for NTP6412ANG
NTP6412ANG CAD Models
NTP6412ANG Part Data Attributes:
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NTP6412ANG
onsemi
Buy Now
Datasheet
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Compare Parts:
NTP6412ANG
onsemi
Single N-Channel Power MOSFET 100V, 58A, 18.2mΩ, TO-220 3 LEAD STANDARD, 50-TUBE
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-220 3 LEAD STANDARD | |
| Package Description | CASE 221A-09, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | 221A | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 300 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 58 A | |
| Drain-source On Resistance-Max | 0.0182 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 167 W | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for NTP6412ANG
This table gives cross-reference parts and alternative options found for NTP6412ANG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTP6412ANG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFS4610PBF | Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3/2 | Infineon Technologies AG | NTP6412ANG vs IRFS4610PBF |
| IXTT75N10 | Power Field-Effect Transistor, 75A I(D), 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | IXYS Corporation | NTP6412ANG vs IXTT75N10 |
| IRFS4610TRLPBF | Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | NTP6412ANG vs IRFS4610TRLPBF |
| IRFSL4610TRLPBF | Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN | Infineon Technologies AG | NTP6412ANG vs IRFSL4610TRLPBF |
| IRFS4610 | Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3/2 | Infineon Technologies AG | NTP6412ANG vs IRFS4610 |
| PSMN013-100PS,127 | PSMN013-100PS - N-channel 100V 13.9mΩ standard level MOSFET in TO220.@en-us TO-220 3-Pin | Nexperia | NTP6412ANG vs PSMN013-100PS,127 |
| IRFP4710 | Power Field-Effect Transistor, 72A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN | Infineon Technologies AG | NTP6412ANG vs IRFP4710 |
| HUF75645P3 | N-Channel UltraFET Power MOSFET 100V, 75A, 14mΩ, 800-TUBE | onsemi | NTP6412ANG vs HUF75645P3 |
| APT10M19BVFRG | Power Field-Effect Transistor, 75A I(D), 100V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN | Microsemi Corporation | NTP6412ANG vs APT10M19BVFRG |
| AUIRFB4610 | Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 | Infineon Technologies AG | NTP6412ANG vs AUIRFB4610 |