Part Details for NUS5530MNR2G by onsemi
Overview of NUS5530MNR2G by onsemi
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Consumer Electronics
Internet of Things (IoT)
Industrial Automation
Smart Cities
Renewable Energy
Robotics and Drones
Price & Stock for NUS5530MNR2G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
2156-NUS5530MNR2G-OS-ND
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DigiKey | IC MOSFET W/PNP SW TRANS 8-DFN Min Qty: 424 Lead time: 8 Weeks Container: Bulk MARKETPLACE PRODUCT |
105255 In Stock |
|
$0.7100 | Buy Now |
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DISTI #
2832-NUS5530MNR2G-488-ND
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DigiKey | IC MOSFET W/PNP SW TRANS 8-DFN Min Qty: 424 Lead time: 8 Weeks Container: Tape & Reel (TR) MARKETPLACE PRODUCT |
84000 In Stock |
|
$0.5900 | Buy Now |
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DISTI #
NUS5530MNR2GOSTR-ND
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DigiKey | IC MOSFET W/PNP SW TRANS 8-DFN Min Qty: 424 Lead time: 8 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
$0.6149 / $0.6769 | Buy Now |
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DISTI #
NUS5530MNR2G
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Avnet Americas | Integrated Power MOSFET with PNP 8-Pin DFN EP T/R - Tape and Reel (Alt: NUS5530MNR2G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel | 84000 Factory Stock |
|
$0.6088 / $0.7267 | Buy Now |
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DISTI #
NUS5530MNR2G
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Avnet Americas | Integrated Power MOSFET with PNP 8-Pin DFN EP T/R - Tape and Reel (Alt: NUS5530MNR2G) RoHS: Compliant Min Qty: 1352 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 84000 Partner Stock |
|
$0.4588 / $0.5476 | Buy Now |
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DISTI #
863-NUS5530MNR2G
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Mouser Electronics | MOSFET INTEGRATED POWER BJT RoHS: Compliant | 0 |
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$0.6140 / $0.6760 | Order Now |
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DISTI #
70465550
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RS | ON Semi NUS5530MNR2G Dual PNP Bipolar Transistor, 2 A, 35 V, 8-Pin DFN | ON Semiconductor NUS5530MNR2G RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 0 |
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$0.8400 / $0.9900 | RFQ |
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Rochester Electronics | NUS5530MN - Power Field-Effect Transistor, 3.9A, 20V, 0.083ohm, P-Channel, MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 105255 |
|
$0.6086 / $0.7160 | Buy Now |
|
DISTI #
NUS5530MNR2G
|
Avnet Americas | Integrated Power MOSFET with PNP 8-Pin DFN EP T/R - Tape and Reel (Alt: NUS5530MNR2G) RoHS: Compliant Min Qty: 1352 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 84000 Partner Stock |
|
$0.4588 / $0.5476 | Buy Now |
|
DISTI #
NUS5530MNR2G
|
Avnet Americas | Integrated Power MOSFET with PNP 8-Pin DFN EP T/R - Tape and Reel (Alt: NUS5530MNR2G) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel | 84000 Factory Stock |
|
$0.6088 / $0.7267 | Buy Now |
Part Details for NUS5530MNR2G
NUS5530MNR2G CAD Models
NUS5530MNR2G Part Data Attributes
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|
NUS5530MNR2G
onsemi
Buy Now
Datasheet
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Compare Parts:
NUS5530MNR2G
onsemi
Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor, DFN8 3.3 x 3.3 mm Package, 3000-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DFN8 3.3 x 3.3 mm Package | |
| Package Description | DFN-8 | |
| Pin Count | 8 | |
| Manufacturer Package Code | 506AL | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Collector Current-Max (IC) | 2 A | |
| Configuration | SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR AND DIODE | |
| DC Current Gain-Min (hFE) | 100 | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 3.9 A | |
| Drain-source On Resistance-Max | 0.083 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Fall Time-Max (tf) | 70 ns | |
| JESD-30 Code | R-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.635 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 55 ns | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| VCEsat-Max | 0.3 V |
Alternate Parts for NUS5530MNR2G
This table gives cross-reference parts and alternative options found for NUS5530MNR2G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NUS5530MNR2G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NUS5530MNR2G | 3.9A, 20V, 0.083ohm, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 506AL-01, DFN-8 | Rochester Electronics LLC | NUS5530MNR2G vs NUS5530MNR2G |