Part Details for NVB5404NT4G by onsemi
Overview of NVB5404NT4G by onsemi
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for NVB5404NT4G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
74AK1293
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Newark | Nvb5404Nt4G, Single Mosfets |Onsemi NVB5404NT4G Min Qty: 260 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$1.2800 / $1.9700 | Buy Now |
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DISTI #
NVB5404NT4GOSCT-ND
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DigiKey | MOSFET N-CH 40V 24A D2PAK Min Qty: 1 Lead time: 28 Weeks Container: Cut Tape (CT), Digi-Reel® |
796 In Stock |
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$1.9232 / $2.9100 | Buy Now |
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Rochester Electronics | NVB5404N - Power Field-Effect Transistor, 24A, 40V, 0.0045ohm, N-Channel, MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 492 |
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$1.2100 / $1.4200 | Buy Now |
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DISTI #
4185161
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Farnell | NVB5404NT4G, SINGLE MOSFETS RoHS: Compliant Min Qty: 800 Lead time: 3 Weeks, 1 Days Container: Each | 492 |
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$1.5804 | Buy Now |
Part Details for NVB5404NT4G
NVB5404NT4G CAD Models
NVB5404NT4G Part Data Attributes:
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NVB5404NT4G
onsemi
Buy Now
Datasheet
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Compare Parts:
NVB5404NT4G
onsemi
Power MOSFET 40V, 167A, 4.5 mOhm, Single N-Channel, D2PAK. Power MOSFET 40V 167A 4.5 mOhm Single N-Channel D2PAK, D2PAK 2 LEAD, 800-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | D2PAK 2 LEAD | |
| Package Description | D2PAK-3/2 | |
| Pin Count | 3 | |
| Manufacturer Package Code | 418B-04 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 1000 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 24 A | |
| Drain-source On Resistance-Max | 0.0045 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 254 W | |
| Pulsed Drain Current-Max (IDM) | 670 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |