Part Details for NVD5407NT4G by onsemi
Overview of NVD5407NT4G by onsemi
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for NVD5407NT4G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
863-NVD5407NT4G
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Mouser Electronics | MOSFET Single N-Channel Power MOSFET 40V, 38A, 26mohm, Power MOSFET 40V, 38A, 26 mOhm, Single N-Channel, DPAK. RoHS: Compliant | 0 |
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$0.3100 / $0.9200 | Order Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR | 1351 |
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$0.2000 / $0.4800 | Buy Now |
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Wuhan P&S | 40V,26m��,38A,Single N-Ch Power MOSFET Min Qty: 1 | 2459 |
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$0.3900 / $0.8100 | Buy Now |
Part Details for NVD5407NT4G
NVD5407NT4G CAD Models
NVD5407NT4G Part Data Attributes
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NVD5407NT4G
onsemi
Buy Now
Datasheet
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NVD5407NT4G
onsemi
Single N-Channel Power MOSFET 40V, 38A, 26mΩ, Power MOSFET 40V, 38A, 26 mOhm, Single N-Channel, DPAK., 2500-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | ONSEMI | |
| Manufacturer Package Code | 369C | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 150 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 38 A | |
| Drain-source On Resistance-Max | 0.026 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 80 pF | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 75 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |