Datasheets
NVD5C434NT4G by: onsemi

Single N-Channel Power MOSFET, 40V, 163A, 2.2mΩ DPAK 2500 tape and reel, 2500-REEL, Automotive Qualified

Part Details for NVD5C434NT4G by onsemi

Overview of NVD5C434NT4G by onsemi

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Applications Environmental Monitoring Industrial Automation Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems

Price & Stock for NVD5C434NT4G

Part # Distributor Description Stock Price Buy
DISTI # 18AC0079
Newark Mosfet, Aec-Q101, N-Ch, 40V, To-252, Transistor Polarity:N Channel, Continuous Drain Current Id:163A, Drain Source Voltage Vds:40V, On Resistance Rds(On):0.0017Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Onsemi NVD5C434NT4G Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 2400
  • 1 $2.3800
$2.3800 Buy Now
DISTI # NVD5C434NT4GOSCT-ND
DigiKey MOSFET N-CHANNEL 40V 163A DPAK Min Qty: 1 Lead time: 24 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 2171
In Stock
  • 1 $3.4000
  • 10 $2.8560
  • 100 $2.3103
  • 500 $2.0536
  • 1,000 $1.7584
  • 2,500 $1.6557
  • 5,000 $1.5885
$1.5885 / $3.4000 Buy Now
DISTI # NVD5C434NT4G
Avnet Americas Transistor MOSFET N-CH 40V 163A 3-Pin TO-252 T/R - Tape and Reel (Alt: NVD5C434NT4G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 24 Weeks, 0 Days Container: Reel 0
  • 2,500 $1.9062
  • 5,000 $1.8554
  • 10,000 $1.8045
  • 15,000 $1.7537
  • 20,000 $1.7029
$1.7029 / $1.9062 Buy Now
DISTI # 863-NVD5C434NT4G
Mouser Electronics MOSFET T6 40V SL IN DPAK RoHS: Compliant 0
  • 1 $3.4000
  • 10 $2.8600
  • 100 $2.3200
  • 500 $2.0600
  • 1,000 $1.7600
  • 2,500 $1.6500
  • 5,000 $1.5800
$1.5800 / $3.4000 Order Now
Rochester Electronics NVD5C434N - N-Channel, MOSFET - Power RoHS: Compliant Status: Active Min Qty: 1 2500
  • 1 $1.8500
  • 25 $1.8200
  • 100 $1.7400
  • 500 $1.6700
  • 1,000 $1.5800
$1.5800 / $1.8500 Buy Now
DISTI # NVD5C434NT4G
Avnet Asia Transistor MOSFET N-CH 40V 163A 3-Pin TO-252 T/R (Alt: NVD5C434NT4G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks, 0 Days 0
RFQ
DISTI # NVD5C434NT4G
Avnet Silica Transistor MOSFET N-CH 40V 163A 3-Pin TO-252 T/R (Alt: NVD5C434NT4G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 25 Weeks, 0 Days Silica - 0
Buy Now
DISTI # NVD5C434NT4G
EBV Elektronik Transistor MOSFET N-CH 40V 163A 3-Pin TO-252 T/R (Alt: NVD5C434NT4G) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 26 Weeks, 0 Days EBV - 0
Buy Now

Part Details for NVD5C434NT4G

NVD5C434NT4G CAD Models

NVD5C434NT4G Part Data Attributes

NVD5C434NT4G onsemi
Buy Now Datasheet
Compare Parts:
NVD5C434NT4G onsemi Single N-Channel Power MOSFET, 40V, 163A, 2.2mΩ DPAK 2500 tape and reel, 2500-REEL, Automotive Qualified
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Package Description DPAK-3/2
Manufacturer Package Code 369C
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 49 Weeks
Samacsys Manufacturer onsemi
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 163 A
Drain-source On Resistance-Max 0.0022 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 117 W
Pulsed Drain Current-Max (IDM) 900 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

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