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Transistors / Power Field-Effect Transistors / NVH4L160N120SC1
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NVH4L160N120SC1 by: onsemi

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247−4L, 450-TUBE, Automotive Qualified

Part Details for NVH4L160N120SC1 by onsemi

Overview of NVH4L160N120SC1 by onsemi

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Price & Stock for NVH4L160N120SC1

Part # Distributor Description Stock Price Buy
DISTI # 74AH4862
Newark Mosfet, N-Ch, 1.2Kv, 17.3A, To-247 Rohs Compliant: Yes |Onsemi NVH4L160N120SC1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 450
  • 1 $20.0500
  • 10 $18.5100
  • 25 $18.4000
  • 50 $18.1800
  • 100 $17.4500
  • 250 $17.4400
  • 900 $17.4200
$17.4200 / $20.0500 Buy Now
DISTI # 5556-NVH4L160N120SC1-ND
DigiKey SICFET N-CH 1200V 17.3A TO247 Min Qty: 1 Lead time: 17 Weeks Container: Tube 413
In Stock
  • 1 $12.0900
  • 34 $9.7832
  • 102 $9.2076
  • 510 $8.3444
  • 1,020 $7.6539
$7.6539 / $12.0900 Buy Now
DISTI # NVH4L160N120SC1
Avnet Americas Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247−4L - Rail/Tube (Alt: NVH4L160N120SC1) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 17 Weeks, 0 Days Container: Tube 0
  • 450 $7.7969
  • 900 $7.5862
  • 1,800 $7.3755
  • 2,700 $7.1647
  • 3,600 $6.9540
  • 4,500 $6.7433
  • 45,000 $6.5326
$6.5326 / $7.7969 Buy Now
DISTI # 863-NVH4L160N120SC1
Mouser Electronics MOSFET SIC MOS TO247-4L 1200V 160MOHM AUTO PART RoHS: Compliant 243
  • 1 $12.4500
  • 10 $12.0900
  • 25 $10.7800
  • 50 $10.6800
  • 100 $10.3100
  • 250 $8.2400
  • 450 $7.7100
  • 900 $7.0700
$7.0700 / $12.4500 Buy Now
Future Electronics 1200 V 17.3A 111W N-Channel Through Hole Silicon Carbide MOSFET-TO-247-4L RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 450 Container: Tube 450
Tube
  • 450 $7.5600
$7.5600 Buy Now
Future Electronics 1200 V 17.3A 111W N-Channel Through Hole Silicon Carbide MOSFET-TO-247-4L RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 450 Container: Tube 0
Tube
  • 450 $7.5600
$7.5600 Buy Now
Rochester Electronics NVH4L160N120SC1 - Silicon Carbide MOSFET, N-Channel, 1200 V RoHS: Compliant Status: Active Min Qty: 1 37815
  • 1 $7.6800
  • 25 $7.5300
  • 100 $7.2200
  • 500 $6.9100
  • 1,000 $6.5300
$6.5300 / $7.6800 Buy Now
DISTI # NVH4L160N120SC1
Avnet Americas Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247−4L - Rail/Tube (Alt: NVH4L160N120SC1) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 17 Weeks, 0 Days Container: Tube 0
  • 450 $7.7969
  • 900 $7.5862
  • 1,800 $7.3755
  • 2,700 $7.1647
  • 3,600 $6.9540
  • 4,500 $6.7433
  • 45,000 $6.5326
$6.5326 / $7.7969 Buy Now
DISTI # NVH4L160N120SC1
Avnet Americas Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247−4L - Rail/Tube (Alt: NVH4L160N120SC1) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 17 Weeks, 0 Days Container: Tube 0
  • 450 $7.7969
  • 900 $7.5862
  • 1,800 $7.3755
  • 2,700 $7.1647
  • 3,600 $6.9540
  • 4,500 $6.7433
  • 45,000 $6.5326
$6.5326 / $7.7969 Buy Now
Chip 1 Exchange INSTOCK 1562
RFQ
DISTI # NVH4L160N120SC1
Avnet Asia Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247−4L (Alt: NVH4L160N120SC1) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 17 Weeks, 0 Days 0
  • 450 $12.8662
  • 900 $12.6991
  • 1,350 $12.5363
  • 2,250 $12.3776
  • 4,500 $12.0720
  • 11,250 $11.7811
  • 22,500 $11.5039
$11.5039 / $12.8662 Buy Now
DISTI # NVH4L160N120SC1
EBV Elektronik Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247-4L (Alt: NVH4L160N120SC1) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 2 Weeks, 5 Days EBV - 450
Buy Now
DISTI # 3464025
element14 Asia-Pacific MOSFET, N-CH, 1.2KV, 17.3A, TO-247 RoHS: Compliant Min Qty: 1 Container: Each 450
  • 1 $16.0992
  • 10 $14.8507
$14.8507 / $16.0992 Buy Now
DISTI # 3464025
Farnell MOSFET, N-CH, 1.2KV, 17.3A, TO-247 RoHS: Compliant Min Qty: 1 Lead time: 9 Weeks, 1 Days Container: Each 450
  • 1 $11.2724
$11.2724 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 450 900
  • 450 $9.5300
  • 900 $8.8900
$8.8900 / $9.5300 Buy Now
Wuhan P&S 1200 V,17.3A,N-Channel Power MOSFET Min Qty: 1 202
  • 1 $34.0900
  • 100 $21.7600
  • 500 $17.9400
  • 1,000 $16.5000
$16.5000 / $34.0900 Buy Now

Part Details for NVH4L160N120SC1

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NVH4L160N120SC1 Part Data Attributes

Parametric Data
NVH4L160N120SC1 onsemi
Buy Now Datasheet
Compare Parts:
NVH4L160N120SC1 onsemi Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247−4L, 450-TUBE, Automotive Qualified
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Manufacturer Package Code 340CJ
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 61 Weeks
Date Of Intro 2019-12-20
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 128 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 17.3 A
Drain-source On Resistance-Max 0.224 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 4.3 pF
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T4
JESD-609 Code e3
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 111 W
Pulsed Drain Current-Max (IDM) 69 A
Reference Standard AEC-Q101
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE
Turn-off Time-Max (toff) 39 ns
Turn-on Time-Max (ton) 40 ns

Alternate Parts for NVH4L160N120SC1

This table gives cross-reference parts and alternative options found for NVH4L160N120SC1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NVH4L160N120SC1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NTH4L160N120SC1 Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L, 450-TUBE onsemi NVH4L160N120SC1 vs NTH4L160N120SC1

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