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Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mΩ, 1200 V, M1, TO247−3L Silicon Carbide MOSFET, N?Channel, 1200 V, 160 m?, TO247?3L, 450-TUBE, Automotive Qualified
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
74AH4858
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Newark | Mosfet, N-Ch, 1.2Kv, 17A, To-247 Rohs Compliant: Yes |Onsemi NVHL160N120SC1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 1348 |
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$17.8600 / $22.7000 | Buy Now |
DISTI #
5556-NVHL160N120SC1-ND
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DigiKey | SICFET N-CH 1200V 17A TO247-3 Min Qty: 1 Lead time: 18 Weeks Container: Tube |
450 In Stock |
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$13.4929 / $19.5400 | Buy Now |
DISTI #
NVHL160N120SC1
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Avnet Americas | Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mΩ, 1200 V, M1, TO247−3L Silicon Carbide MOSFET, N?Channel, 1200 V, 160 m?, TO247?3L - Rail/Tube (Alt: NVHL160N120SC1) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 18 Weeks, 0 Days Container: Tube | 3600 Factory Stock |
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$6.2169 / $7.4201 | Buy Now |
DISTI #
863-NVHL160N120SC1
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Mouser Electronics | MOSFET SIC MOS TO247-3L 160MOHM 1200V RoHS: Compliant | 2646 |
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$12.2800 / $19.5300 | Buy Now |
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Future Electronics | Single N-Channel 1200 V 17 A 119 W Surface Mount SiC Power Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 450 Container: Tube | 450Tube |
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$12.0400 | Buy Now |
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Future Electronics | Single N-Channel 1200 V 17 A 119 W Surface Mount SiC Power Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 450 Container: Tube | 0Tube |
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$12.0400 | Buy Now |
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Rochester Electronics | NVHL160N - Silicon Carbide MOSFET, N Channel, 1200 V, 160 m Status: Active Min Qty: 1 | 450 |
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$6.2100 / $7.3100 | Buy Now |
DISTI #
NVHL160N120SC1
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Avnet Americas | Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mΩ, 1200 V, M1, TO247−3L Silicon Carbide MOSFET, N?Channel, 1200 V, 160 m?, TO247?3L - Rail/Tube (Alt: NVHL160N120SC1) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 18 Weeks, 0 Days Container: Tube | 3600 Factory Stock |
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$6.2169 / $7.4201 | Buy Now |
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Ameya Holding Limited | Min Qty: 115 | 895 |
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$17.4280 / $17.9669 | Buy Now |
DISTI #
NVHL160N120SC1
|
Avnet Americas | Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mΩ, 1200 V, M1, TO247−3L Silicon Carbide MOSFET, N?Channel, 1200 V, 160 m?, TO247?3L - Rail/Tube (Alt: NVHL160N120SC1) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 18 Weeks, 0 Days Container: Tube | 3600 Factory Stock |
|
$6.2169 / $7.4201 | Buy Now |
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NVHL160N120SC1
onsemi
Buy Now
Datasheet
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Compare Parts:
NVHL160N120SC1
onsemi
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mΩ, 1200 V, M1, TO247−3L Silicon Carbide MOSFET, N?Channel, 1200 V, 160 m?, TO247?3L, 450-TUBE, Automotive Qualified
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Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Manufacturer Package Code | 340CX | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 128 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1200 V | |
Drain Current-Max (ID) | 17 A | |
Drain-source On Resistance-Max | 0.224 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 119 W | |
Pulsed Drain Current-Max (IDM) | 69 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON CARBIDE |