Datasheets
NVHL160N120SC1 by: onsemi

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mΩ, 1200 V, M1, TO247−3L Silicon Carbide MOSFET, N?Channel, 1200 V, 160 m?, TO247?3L, 450-TUBE, Automotive Qualified

Part Details for NVHL160N120SC1 by onsemi

Overview of NVHL160N120SC1 by onsemi

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Price & Stock for NVHL160N120SC1

Part # Distributor Description Stock Price Buy
DISTI # 74AH4858
Newark Mosfet, N-Ch, 1.2Kv, 17A, To-247 Rohs Compliant: Yes |Onsemi NVHL160N120SC1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 1348
  • 1 $22.7000
  • 10 $21.4100
  • 25 $20.1200
  • 50 $18.8300
  • 100 $18.3400
  • 250 $17.8600
$17.8600 / $22.7000 Buy Now
DISTI # 5556-NVHL160N120SC1-ND
DigiKey SICFET N-CH 1200V 17A TO247-3 Min Qty: 1 Lead time: 18 Weeks Container: Tube 450
In Stock
  • 1 $19.5400
  • 30 $15.8193
  • 120 $14.8887
  • 510 $13.4929
$13.4929 / $19.5400 Buy Now
DISTI # NVHL160N120SC1
Avnet Americas Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mΩ, 1200 V, M1, TO247−3L Silicon Carbide MOSFET, N?Channel, 1200 V, 160 m?, TO247?3L - Rail/Tube (Alt: NVHL160N120SC1) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 18 Weeks, 0 Days Container: Tube 3600 Factory Stock
  • 450 $7.4201
  • 900 $7.2196
  • 1,800 $7.0190
  • 2,700 $6.8185
  • 3,600 $6.6180
  • 4,500 $6.4174
  • 45,000 $6.2169
$6.2169 / $7.4201 Buy Now
DISTI # 863-NVHL160N120SC1
Mouser Electronics MOSFET SIC MOS TO247-3L 160MOHM 1200V RoHS: Compliant 2646
  • 1 $19.5300
  • 10 $17.2200
  • 25 $15.8200
  • 50 $15.8100
  • 100 $14.8800
  • 250 $14.4300
  • 450 $12.2800
$12.2800 / $19.5300 Buy Now
Future Electronics Single N-Channel 1200 V 17 A 119 W Surface Mount SiC Power Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 450 Container: Tube 450
Tube
  • 450 $12.0400
$12.0400 Buy Now
Future Electronics Single N-Channel 1200 V 17 A 119 W Surface Mount SiC Power Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 450 Package Multiple: 450 Container: Tube 0
Tube
  • 450 $12.0400
$12.0400 Buy Now
Rochester Electronics NVHL160N - Silicon Carbide MOSFET, N Channel, 1200 V, 160 m Status: Active Min Qty: 1 450
  • 1 $7.3100
  • 25 $7.1700
  • 100 $6.8700
  • 500 $6.5800
  • 1,000 $6.2100
$6.2100 / $7.3100 Buy Now
DISTI # NVHL160N120SC1
Avnet Americas Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mΩ, 1200 V, M1, TO247−3L Silicon Carbide MOSFET, N?Channel, 1200 V, 160 m?, TO247?3L - Rail/Tube (Alt: NVHL160N120SC1) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 18 Weeks, 0 Days Container: Tube 3600 Factory Stock
  • 450 $7.4201
  • 900 $7.2196
  • 1,800 $7.0190
  • 2,700 $6.8185
  • 3,600 $6.6180
  • 4,500 $6.4174
  • 45,000 $6.2169
$6.2169 / $7.4201 Buy Now
Ameya Holding Limited   Min Qty: 115 895
  • 115 $17.9669
  • 225 $17.4280
$17.4280 / $17.9669 Buy Now
DISTI # NVHL160N120SC1
Avnet Americas Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mΩ, 1200 V, M1, TO247−3L Silicon Carbide MOSFET, N?Channel, 1200 V, 160 m?, TO247?3L - Rail/Tube (Alt: NVHL160N120SC1) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 18 Weeks, 0 Days Container: Tube 3600 Factory Stock
  • 450 $7.4201
  • 900 $7.2196
  • 1,800 $7.0190
  • 2,700 $6.8185
  • 3,600 $6.6180
  • 4,500 $6.4174
  • 45,000 $6.2169
$6.2169 / $7.4201 Buy Now
DISTI # 3464028
element14 Asia-Pacific MOSFET, N-CH, 1.2KV, 17A, TO-247 RoHS: Compliant Min Qty: 1 Container: Each 1348
  • 1 $14.1399
  • 10 $14.0149
$14.0149 / $14.1399 Buy Now
DISTI # 3464028
Farnell MOSFET, N-CH, 1.2KV, 17A, TO-247 RoHS: Compliant Min Qty: 1 Lead time: 40 Weeks, 1 Days Container: Each 1348
  • 1 $15.7015
  • 5 $14.3072
  • 10 $12.9129
  • 50 $12.6994
  • 100 $11.9583
  • 250 $10.4007
$10.4007 / $15.7015 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 450 900
  • 450 $9.0700
  • 900 $8.4700
$8.4700 / $9.0700 Buy Now

Part Details for NVHL160N120SC1

NVHL160N120SC1 CAD Models

NVHL160N120SC1 Part Data Attributes

NVHL160N120SC1 onsemi
Buy Now Datasheet
Compare Parts:
NVHL160N120SC1 onsemi Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mΩ, 1200 V, M1, TO247−3L Silicon Carbide MOSFET, N?Channel, 1200 V, 160 m?, TO247?3L, 450-TUBE, Automotive Qualified
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Manufacturer Package Code 340CX
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 128 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 17 A
Drain-source On Resistance-Max 0.224 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 119 W
Pulsed Drain Current-Max (IDM) 69 A
Reference Standard AEC-Q101
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

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