Part Details for NVMFS005N10MCLT1G by onsemi
Overview of NVMFS005N10MCLT1G by onsemi
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for NVMFS005N10MCLT1G
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
22AJ0346
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Newark | Ptng 100V Ll So8Fl/ Reel Rohs Compliant: Yes |Onsemi NVMFS005N10MCLT1G Min Qty: 1500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.7780 / $1.0500 | Buy Now |
DISTI #
93AK8758
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Newark | Mosfet, N-Ch, 100V, 108A, Dfn-5 Rohs Compliant: Yes |Onsemi NVMFS005N10MCLT1G Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$1.0800 / $1.9200 | Buy Now |
DISTI #
488-NVMFS005N10MCLT1GCT-ND
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DigiKey | PTNG 100V LL SO8FL Min Qty: 1 Lead time: 22 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2701 In Stock |
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$0.7775 / $1.8500 | Buy Now |
DISTI #
NVMFS005N10MCLT1G
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Avnet Americas | Transistor Mosfet N Channel 100V 108A 5-Pin DFN T/R - Tape and Reel (Alt: NVMFS005N10MCLT1G) RoHS: Not Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
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$0.7713 / $0.9206 | Buy Now |
DISTI #
863-VMFS005N10MCLT1G
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Mouser Electronics | MOSFET MOSFET - Power, Single, N-Channel100 V, 5.1 mohm, 108A DFN5 (Pb-Free) RoHS: Compliant | 4080 |
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$0.7770 / $1.8500 | Buy Now |
DISTI #
NVMFS005N10MCLT1G
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Avnet Americas | Transistor Mosfet N Channel 100V 108A 5-Pin DFN T/R - Tape and Reel (Alt: NVMFS005N10MCLT1G) RoHS: Not Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
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$0.7713 / $0.9206 | Buy Now |
DISTI #
NVMFS005N10MCLT1G
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Avnet Asia | Transistor Mosfet N Channel 100V 108A 5-Pin DFN T/R (Alt: NVMFS005N10MCLT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 22 Weeks, 0 Days | 7500 |
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$0.7318 / $0.8184 | Buy Now |
DISTI #
NVMFS005N10MCLT1G
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Avnet Silica | Transistor Mosfet N Channel 100V 108A 5-Pin DFN T/R (Alt: NVMFS005N10MCLT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 23 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
DISTI #
NVMFS005N10MCLT1G
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EBV Elektronik | Transistor Mosfet N Channel 100V 108A 5-Pin DFN T/R (Alt: NVMFS005N10MCLT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 24 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Flip Electronics | Stock | 129000 |
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RFQ |
Part Details for NVMFS005N10MCLT1G
NVMFS005N10MCLT1G CAD Models
NVMFS005N10MCLT1G Part Data Attributes:
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NVMFS005N10MCLT1G
onsemi
Buy Now
Datasheet
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Compare Parts:
NVMFS005N10MCLT1G
onsemi
MOSFET - Power, Single, N-Channel 100 V, 5.1 mΩ, 108A DFN5 (Pb-Free), 1500-REEL, Automotive Qualified
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Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Package Description | SO-8FL, DFN5, 6 PIN | |
Manufacturer Package Code | 488AA | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 68 Weeks | |
Date Of Intro | 2020-11-04 | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 365 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 108 A | |
Drain-source On Resistance-Max | 0.0051 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 22 pF | |
JESD-30 Code | R-PDSO-F6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 131 W | |
Pulsed Drain Current-Max (IDM) | 695 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Element Material | SILICON |