-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Single N-Channel Power MOSFET 100 V, 131 A, 3.6mΩ, 1500-REEL, Automotive Qualified
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
77AH0638
|
Newark | Ptng 100V Ll Nch So-8Fl Wettable Flank For Automotive Market/ Reel Rohs Compliant: Yes |Onsemi NVMFWS3D6N10MCLT1G Min Qty: 1500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$1.6400 / $2.2100 | Buy Now |
DISTI #
488-NVMFWS3D6N10MCLT1GCT-ND
|
DigiKey | PTNG 100V LL NCH SO-8FL WETTABLE Min Qty: 1 Lead time: 22 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1280 In Stock |
|
$1.7074 / $3.5100 | Buy Now |
DISTI #
NVMFWS3D6N10MCLT1G
|
Avnet Americas | Power MOSFET N-Channel 100V 132A 5-Pin DFN T/R - Tape and Reel (Alt: NVMFWS3D6N10MCLT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
|
$1.6250 / $1.9395 | Buy Now |
DISTI #
863-NVMFWS3D6N10MCLT
|
Mouser Electronics | MOSFET Single N-Channel Power MOSFET 100 V, 131 A, 3.6mohm RoHS: Compliant | 13744 |
|
$1.7500 / $3.5100 | Buy Now |
DISTI #
NVMFWS3D6N10MCLT1G
|
Avnet Americas | Power MOSFET N-Channel 100V 132A 5-Pin DFN T/R - Tape and Reel (Alt: NVMFWS3D6N10MCLT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
|
$1.6250 / $1.9395 | Buy Now |
DISTI #
SMC-NVMFWS3D6N10MCLT1G
|
Sensible Micro Corporation | AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days Date Code: 2201 | 936 |
|
RFQ | |
DISTI #
SMC-NVMFWS3D6N10MCLT1G
|
Sensible Micro Corporation | AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days Date Code: 2208 | 28500 |
|
RFQ | |
DISTI #
NVMFWS3D6N10MCLT1G
|
Avnet Asia | Power MOSFET N-Channel 100V 132A 5-Pin DFN T/R (Alt: NVMFWS3D6N10MCLT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 22 Weeks, 0 Days | 7500 |
|
$1.5418 / $1.7243 | Buy Now |
DISTI #
NVMFWS3D6N10MCLT1G
|
Avnet Silica | (Alt: NVMFWS3D6N10MCLT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 23 Weeks, 0 Days | Silica - 0 |
|
Buy Now | |
DISTI #
NVMFWS3D6N10MCLT1G
|
EBV Elektronik | (Alt: NVMFWS3D6N10MCLT1G) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 24 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
NVMFWS3D6N10MCLT1G
onsemi
Buy Now
Datasheet
|
Compare Parts:
NVMFWS3D6N10MCLT1G
onsemi
Single N-Channel Power MOSFET 100 V, 131 A, 3.6mΩ, 1500-REEL, Automotive Qualified
|
Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Package Description | SO-8FL, DFN5, 6 PIN | |
Manufacturer Package Code | 507BA | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 68 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 739 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 132 A | |
Drain-source On Resistance-Max | 0.0036 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 139 W | |
Pulsed Drain Current-Max (IDM) | 888 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Element Material | SILICON |