Part Details for PJD10P10A_L2_00001 by PanJit Semiconductor
Overview of PJD10P10A_L2_00001 by PanJit Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for PJD10P10A_L2_00001
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
241-PJD10P10AL200001
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Mouser Electronics | MOSFET 100V P-Channel MOSFET RoHS: Compliant | 0 |
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DISTI #
PJD10P10A_L2_00001
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Avnet Silica | Trans MOSFET P-CH 100V 2A 3-Pin TO-252AA T/R (Alt: PJD10P10A_L2_00001) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 3 Weeks, 6 Days | Silica - 0 |
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Part Details for PJD10P10A_L2_00001
PJD10P10A_L2_00001 CAD Models
PJD10P10A_L2_00001 Part Data Attributes:
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PJD10P10A_L2_00001
PanJit Semiconductor
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Datasheet
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PJD10P10A_L2_00001
PanJit Semiconductor
Power Field-Effect Transistor,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | PANJIT INTERNATIONAL INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | PANJIT | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 2 A | |
Drain-source On Resistance-Max | 0.21 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |