Part Details for PJW3P10A_R2_00001 by PanJit Semiconductor
Overview of PJW3P10A_R2_00001 by PanJit Semiconductor
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for PJW3P10A_R2_00001
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
241-PJW3P10AR200001
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Mouser Electronics | MOSFET 100V P-Channel Enhancement Mode MOSFET RoHS: Compliant | 0 |
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$0.2190 / $0.6500 | Order Now |
DISTI #
PJW3P10A-R2
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TME | Transistor: P-MOSFET, unipolar, -100V, -2.6A, Idm: -10.4A, 3.1W Min Qty: 1 | 0 |
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$0.1890 / $0.7840 | RFQ |
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NAC | 100V P-Channel Enhancement Mode MOSFET RoHS: Compliant Min Qty: 1 Package Multiple: 2500 Container: Reel | 19876 |
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$0.2000 / $0.2100 | Buy Now |
DISTI #
PJW3P10A_R2_00001
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Avnet Asia | Power MOSFET, P Channel, 100 V, 2.6 A, 210 Milliohms, SOT-223, 4 Pins, Surface Mount (Alt: PJW3P10A_R2_00001) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days | 0 |
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RFQ | |
DISTI #
PJW3P10A_R2_00001
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Avnet Silica | Power MOSFET, P Channel, 100 V, 2.6 A, 210 Milliohms, SOT-223, 4 Pins, Surface Mount (Alt: PJW3P10A_R2_00001) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 3 Weeks, 6 Days | Silica - 42500 |
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Buy Now |
Part Details for PJW3P10A_R2_00001
PJW3P10A_R2_00001 CAD Models
PJW3P10A_R2_00001 Part Data Attributes:
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PJW3P10A_R2_00001
PanJit Semiconductor
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Datasheet
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PJW3P10A_R2_00001
PanJit Semiconductor
Power Field-Effect Transistor
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | PANJIT INTERNATIONAL INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | PANJIT | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 2.6 A | |
Drain-source On Resistance-Max | 0.21 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 10.4 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |