Datasheets
PMDPB58UPE,115 by:

20 V dual P-channel Trench MOSFET DFN 6-Pin

Part Details for PMDPB58UPE,115 by NXP Semiconductors

Overview of PMDPB58UPE,115 by NXP Semiconductors

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy

Price & Stock for PMDPB58UPE,115

Part # Distributor Description Stock Price Buy
Bristol Electronics   2550
RFQ
DISTI # SMC-PMDPB58UPE,115
Sensible Micro Corporation Mosfet Pmdpb58Upe/Sot1118/Huson6 RoHS: Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Date Code: 2148 Container: Tape & Reel 9000
  • 100 $0.2080
  • 500 $0.2080
  • 1,000 $0.2080
$0.2080 RFQ
DISTI # SMC-PMDPB58UPE,115
Sensible Micro Corporation Mosfet Pmdpb58Upe/Sot1118/Huson6 RoHS: Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Date Code: 2149 Container: Tape & Reel 6000
  • 100 $0.2080
  • 500 $0.2080
  • 1,000 $0.2080
$0.2080 RFQ
Chip1Cloud MOSFET 2P-CH 20V 3.6A HUSON6 2800
RFQ

Part Details for PMDPB58UPE,115

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PMDPB58UPE,115 Part Data Attributes

PMDPB58UPE,115 NXP Semiconductors
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PMDPB58UPE,115 NXP Semiconductors 20 V dual P-channel Trench MOSFET DFN 6-Pin
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code DFN
Pin Count 6
Manufacturer Package Code SOT1118
Reach Compliance Code compliant
ECCN Code EAR99
Drain Current-Max (ID) 3.6 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 8.33 W
Surface Mount YES
Terminal Finish TIN
Time@Peak Reflow Temperature-Max (s) 30

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