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PSMN1R7-60BS,118 by:

PSMN1R7-60BS - N-channel 60 V 2 mΩ standard level MOSFET in D2PAK@en-us D2PAK 3-Pin

Part Details for PSMN1R7-60BS,118 by Nexperia

Overview of PSMN1R7-60BS,118 by Nexperia

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for PSMN1R7-60BS,118

Part # Distributor Description Stock Price Buy
DISTI # 05W5714
Newark Mosfet, N Channel, 60V, 120A, d2Pak, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:120A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Nexperia PSMN1R7-60BS,118 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 3738
  • 1 $3.0100
  • 10 $2.6900
  • 25 $2.5200
  • 50 $2.3400
  • 100 $2.1600
$2.1600 / $3.0100 Buy Now
DISTI # 1727-7106-1-ND
DigiKey MOSFET N-CH 60V 120A D2PAK Min Qty: 1 Lead time: 13 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 4980
In Stock
  • 1 $3.4400
  • 10 $2.8900
  • 100 $2.3383
  • 800 $2.0785
  • 1,600 $1.7797
  • 2,400 $1.6758
  • 5,600 $1.6078
$1.6078 / $3.4400 Buy Now
DISTI # PSMN1R7-60BS,118
Avnet Americas Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: PSMN1R7-60BS,118) RoHS: Compliant Min Qty: 4800 Package Multiple: 800 Lead time: 13 Weeks, 0 Days Container: Reel 0
  • 4,800 $1.6267
  • 6,400 $1.5827
  • 11,200 $1.5387
  • 24,000 $1.4948
  • 48,000 $1.4508
  • 240,000 $1.4068
  • 480,000 $1.3629
$1.3629 / $1.6267 Buy Now
DISTI # 771-PSMN1R7-60BS,118
Mouser Electronics MOSFET PSMN1R7-60BS/SOT404/D2PAK RoHS: Compliant 19622
  • 1 $3.2700
  • 10 $2.8000
  • 25 $2.6200
  • 100 $2.2600
  • 250 $2.1700
  • 500 $1.9800
  • 800 $1.6600
  • 2,400 $1.6000
$1.6000 / $3.2700 Buy Now
Future Electronics PSMN1R7 Series 60 V 2 mOhm SMT N-Channel Standard Level MOSFET - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel 800
Reel
  • 800 $1.5900
  • 1,600 $1.5700
  • 2,400 $1.5600
  • 3,200 $1.5400
$1.5400 / $1.5900 Buy Now
Future Electronics PSMN1R7 Series 60 V 2 mOhm SMT N-Channel Standard Level MOSFET - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 4800 Package Multiple: 800 Container: Reel 0
Reel
  • 800 $1.5900
  • 1,600 $1.5700
  • 2,400 $1.5600
  • 3,200 $1.5400
$1.5400 / $1.5900 Buy Now
DISTI # PSMN1R7-60BS.118
TME Transistor: N-MOSFET, unipolar, 60V, 120A, 306W, D2PAK,SOT404 Min Qty: 1 790
  • 1 $3.7600
  • 5 $3.3900
  • 25 $2.9900
  • 100 $2.6900
$2.6900 / $3.7600 Buy Now
DISTI # PSMN1R7-60BS,118
Avnet Asia Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R (Alt: PSMN1R7-60BS,118) RoHS: Compliant Min Qty: 4800 Package Multiple: 800 Lead time: 13 Weeks, 0 Days 0
  • 4,800 $1.4462
  • 9,600 $1.4274
  • 14,400 $1.4091
  • 24,000 $1.3913
  • 48,000 $1.3569
  • 120,000 $1.3242
  • 240,000 $1.2931
$1.2931 / $1.4462 Buy Now
DISTI # PSMN1R7-60BS,118
Avnet Silica Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R (Alt: PSMN1R7-60BS,118) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 15 Weeks, 0 Days Silica - 3200
Buy Now
DISTI # PSMN1R7-60BS,118
EBV Elektronik Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R (Alt: PSMN1R7-60BS,118) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 15 Weeks, 0 Days EBV - 3200
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 800 1600
  • 800 $2.0300
  • 1,600 $1.8900
$1.8900 / $2.0300 Buy Now

Part Details for PSMN1R7-60BS,118

PSMN1R7-60BS,118 CAD Models

PSMN1R7-60BS,118 Part Data Attributes:

PSMN1R7-60BS,118 Nexperia
Buy Now Datasheet
Compare Parts:
PSMN1R7-60BS,118 Nexperia PSMN1R7-60BS - N-channel 60 V 2 mΩ standard level MOSFET in D2PAK@en-us D2PAK 3-Pin
Part Life Cycle Code Active
Ihs Manufacturer NEXPERIA
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Manufacturer Package Code SOT404
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Nexperia
Avalanche Energy Rating (Eas) 913 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.002 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 1076 A
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for PSMN1R7-60BS,118

This table gives cross-reference parts and alternative options found for PSMN1R7-60BS,118. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN1R7-60BS,118, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
PSMN1R7-60BS Power Field-Effect Transistor Nexperia PSMN1R7-60BS,118 vs PSMN1R7-60BS
IPB019N06L3GATMA1 Power Field-Effect Transistor, 120A I(D), 60V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 Infineon Technologies AG PSMN1R7-60BS,118 vs IPB019N06L3GATMA1
Part Number Description Manufacturer Compare
IPB120N06S4H1ATMA1 Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG PSMN1R7-60BS,118 vs IPB120N06S4H1ATMA1
IPB021N06N3G Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 Infineon Technologies AG PSMN1R7-60BS,118 vs IPB021N06N3G
PSMN2R0-60BS TRANSISTOR 120 A, 60 V, 0.002 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power NXP Semiconductors PSMN1R7-60BS,118 vs PSMN2R0-60BS
IPB021N06N3GATMA1 Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 Infineon Technologies AG PSMN1R7-60BS,118 vs IPB021N06N3GATMA1
IPB019N06L3GATMA1 Power Field-Effect Transistor, 120A I(D), 60V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 Infineon Technologies AG PSMN1R7-60BS,118 vs IPB019N06L3GATMA1
PSMN1R7-60BS Power Field-Effect Transistor Nexperia PSMN1R7-60BS,118 vs PSMN1R7-60BS

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