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Transistors / Power Field-Effect Transistors / PSMN1R8-40YLC,115
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PSMN1R8-40YLC,115 by:

PSMN1R8-40YLC - N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology@en-us SOIC 4-Pin

Part Details for PSMN1R8-40YLC,115 by Nexperia

Overview of PSMN1R8-40YLC,115 by Nexperia

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

Price & Stock for PSMN1R8-40YLC,115

Part # Distributor Description Stock Price Buy
DISTI # 90W9537
Newark Mosfet Transistor, N Channel, 100 A, 40 V, 0.0015 Ohm, 10 V, 1.45 V Rohs Compliant: Yes |Nexperia PSMN1R8-40YLC,115 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 2297
  • 1 $1.8900
  • 10 $1.5700
  • 100 $1.2500
  • 500 $1.0600
$1.0600 / $1.8900 Buy Now
DISTI # 1727-1052-1-ND
DigiKey MOSFET N-CH 40V 100A LFPAK56 Min Qty: 1 Lead time: 13 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 61001
In Stock
  • 1 $1.8200
  • 10 $1.5080
  • 100 $1.2000
  • 500 $1.0154
  • 1,500 $0.8616
  • 3,000 $0.8185
  • 7,500 $0.7877
  • 10,500 $0.7616
$0.7616 / $1.8200 Buy Now
DISTI # PSMN1R8-40YLC,115
Avnet Americas Trans MOSFET N-CH 40V 100A 5-Pin(4+Tab) LFPAK T/R - Tape and Reel (Alt: PSMN1R8-40YLC,115) RoHS: Not Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 13 Weeks, 0 Days Container: Reel 6000
  • 1,500 $0.7095
$0.7095 Buy Now
DISTI # 771-PSMN1R8-40YLC115
Mouser Electronics MOSFET PSMN1R8-40YLC/SOT669/LFPAK RoHS: Compliant 11854
  • 1 $1.8200
  • 10 $1.5100
  • 100 $1.2000
  • 500 $1.0200
  • 1,000 $0.9950
  • 1,500 $0.8230
  • 3,000 $0.7760
  • 9,000 $0.7610
$0.7610 / $1.8200 Buy Now
Future Electronics PSMN1R8 Series 40 V 272 W 96 nC SMT N-Channel Logic Level MOSFET - SOT-669 RoHS: Compliant pbFree: Yes Min Qty: 1500 Package Multiple: 1500 Container: Reel 1500
Reel
  • 1,500 $0.5700
  • 3,000 $0.5500
$0.5500 / $0.5700 Buy Now
Future Electronics PSMN1R8 Series 40 V 272 W 96 nC SMT N-Channel Logic Level MOSFET - SOT-669 RoHS: Compliant pbFree: Yes Min Qty: 1500 Package Multiple: 1500 Container: Reel 0
Reel
  • 1,500 $0.7900
  • 3,000 $0.7750
  • 4,500 $0.7650
  • 6,000 $0.7550
  • 7,500 $0.7350
$0.7350 / $0.7900 Buy Now
DISTI # PSMN1R8-40YLC,115
Avnet Americas Trans MOSFET N-CH 40V 100A 5-Pin(4+Tab) LFPAK T/R - Tape and Reel (Alt: PSMN1R8-40YLC,115) RoHS: Not Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 13 Weeks, 0 Days Container: Reel 6000
  • 1,500 $0.7095
$0.7095 Buy Now
DISTI # PSMN1R8-40YLC.115
TME Transistor: N-MOSFET, unipolar, 40V, 100A, 272W Min Qty: 1 0
  • 1 $1.8200
  • 5 $1.6500
  • 25 $1.4500
  • 100 $1.3100
  • 500 $1.2300
$1.2300 / $1.8200 RFQ
DISTI # PSMN1R8-40YLC,115
Avnet Asia Trans MOSFET N-CH 40V 100A 5-Pin(4+Tab) LFPAK T/R (Alt: PSMN1R8-40YLC,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 13 Weeks, 0 Days 0
  • 1,500 $0.6532
  • 3,000 $0.6447
  • 4,500 $0.6364
  • 7,500 $0.6283
  • 15,000 $0.6128
  • 37,500 $0.5981
  • 75,000 $0.5840
$0.5840 / $0.6532 Buy Now
DISTI # PSMN1R8-40YLC,115
Avnet Silica Trans MOSFET N-CH 40V 100A 5-Pin(4+Tab) LFPAK T/R (Alt: PSMN1R8-40YLC,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 15 Weeks, 0 Days Silica - 4500
Buy Now
DISTI # PSMN1R8-40YLC,115
EBV Elektronik Trans MOSFET N-CH 40V 100A 5-Pin(4+Tab) LFPAK T/R (Alt: PSMN1R8-40YLC,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now

Part Details for PSMN1R8-40YLC,115

PSMN1R8-40YLC,115 CAD Models

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PSMN1R8-40YLC,115 Part Data Attributes:

Parametric Data
PSMN1R8-40YLC,115 Nexperia
Buy Now Datasheet
Compare Parts:
PSMN1R8-40YLC,115 Nexperia PSMN1R8-40YLC - N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology@en-us SOIC 4-Pin
Part Life Cycle Code Active
Ihs Manufacturer NEXPERIA
Part Package Code SOIC
Package Description SMALL OUTLINE, R-PSSO-G4
Pin Count 4
Manufacturer Package Code SOT669
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Nexperia
Additional Feature HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 248 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0021 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-235
JESD-30 Code R-PSSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 1128 A
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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