Part Details for QID4515002 by Powerex Power Semiconductors
Overview of QID4515002 by Powerex Power Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Smart Cities
Transportation and Logistics
Agriculture Technology
Automotive
Price & Stock for QID4515002
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
90W9552
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Newark | Igbt Module, Dual, 4.5Kv, 150A, Continuous Collector Current:150A, Collector Emitter Saturation Voltage:3.8V, Power Dissipation:1.5Kw, Operating Temperature Max:150°C, Igbt Termination:Tab, Collector Emitter Voltage Max:4.5Kv Rohs Compliant: No |Powerex QID4515002 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Part Details for QID4515002
QID4515002 CAD Models
QID4515002 Part Data Attributes:
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QID4515002
Powerex Power Semiconductors
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Datasheet
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QID4515002
Powerex Power Semiconductors
Insulated Gate Bipolar Transistor
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | POWEREX INC | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 150 A | |
Collector-Emitter Voltage-Max | 4500 V | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 1000 ns | |
Gate-Emitter Thr Voltage-Max | 6.8 V | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-PUFM-X8 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1500 W | |
Reference Standard | IEC-60077-1; IEC-1287 | |
Rise Time-Max (tr) | 500 ns | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 6000 ns | |
Turn-off Time-Nom (toff) | 4250 ns | |
Turn-on Time-Max (ton) | 2000 ns | |
Turn-on Time-Nom (ton) | 1250 ns | |
VCEsat-Max | 5.5 V |