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Power Field-Effect Transistor, 2A I(D), 800V, 4.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SC-83, TO-263S, D2PAK-3/2
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
846-R8002ANJGTLCT-ND
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DigiKey | NCH 800V 2A POWER MOSFET : R8002 Min Qty: 1 Lead time: 28 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
925 In Stock |
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$1.3950 / $2.9900 | Buy Now |
DISTI #
R8002ANJGTL
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Avnet Americas | Transistor MOSFET N-Channel 800V 2A 3-Pin TO-263S Emboss T/R - Tape and Reel (Alt: R8002ANJGTL) Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0 |
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$1.4508 / $1.6517 | Buy Now |
DISTI #
755-R8002ANJGTL
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Mouser Electronics | MOSFET MOSFET RoHS: Compliant | 1979 |
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$1.3900 / $2.9900 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0Reel |
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$1.4900 | Buy Now |
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Quest Components | 72 |
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$2.1220 / $3.1830 | Buy Now | |
DISTI #
R8002ANJGTL
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TTI | MOSFET MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 1000 Container: Reel | Americas - 0 |
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Buy Now | |
DISTI #
R8002ANJGTL
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Avnet Americas | Transistor MOSFET N-Channel 800V 2A 3-Pin TO-263S Emboss T/R - Tape and Reel (Alt: R8002ANJGTL) Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0 |
|
$1.4508 / $1.6517 | Buy Now |
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Ameya Holding Limited | Transistors FETs, MOSFETs Single Min Qty: 1 | 97-Authorized Distributor |
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$0.7850 / $1.9998 | Buy Now |
DISTI #
R8002ANJGTL
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Avnet Americas | Transistor MOSFET N-Channel 800V 2A 3-Pin TO-263S Emboss T/R - Tape and Reel (Alt: R8002ANJGTL) Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0 |
|
$1.4508 / $1.6517 | Buy Now |
DISTI #
4202979RL
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Farnell | MOSFET, N-CH, 800V, 2A, TO-263 RoHS: Compliant Min Qty: 1000 Lead time: 27 Weeks, 1 Days Container: Reel | 0 |
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$1.5324 | Buy Now |
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R8002ANJGTL
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
R8002ANJGTL
ROHM Semiconductor
Power Field-Effect Transistor, 2A I(D), 800V, 4.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SC-83, TO-263S, D2PAK-3/2
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | SC-83, TO-263S, D2PAK-3/2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 2018-11-22 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Avalanche Energy Rating (Eas) | 0.265 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 2 A | |
Drain-source On Resistance-Max | 4.3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 8 A | |
Surface Mount | YES | |
Terminal Finish | Tin/Copper (Sn/Cu) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for R8002ANJGTL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of R8002ANJGTL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
NDD03N80Z-1G | Power MOSFET 800V 2.9A 4.5 Ohm Single N-Channel DPAK, DPAK INSERTION MOUNT, 75-TUBE | onsemi | R8002ANJGTL vs NDD03N80Z-1G |
NDD03N80ZT4G | Power MOSFET 800V 2.9A 4.5 Ohm Single N-Channel DPAK, DPAK 4 LEAD Single Gauge Surface Mount, 2500-REEL | onsemi | R8002ANJGTL vs NDD03N80ZT4G |
NDF03N80ZH | 2.1A, 800V, 4.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-220, CASE 221AH, 3 PIN | onsemi | R8002ANJGTL vs NDF03N80ZH |