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Transistors / Power Field-Effect Transistors / R8002KNXC7G
Datasheets
R8002KNXC7G by: ROHM Semiconductor

Power Field-Effect Transistor, 1.6A I(D), 800V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FM, 3 PIN

Part Details for R8002KNXC7G by ROHM Semiconductor

Overview of R8002KNXC7G by ROHM Semiconductor

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for R8002KNXC7G

Part # Distributor Description Stock Price Buy
DISTI # 37AJ0933
Newark Mosfet, N-Ch, 800V, 1.6A, To-220Fm Rohs Compliant: Yes |Rohm R8002KNXC7G Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 42
  • 1 $2.0300
  • 10 $1.6800
  • 100 $1.3400
  • 500 $1.1300
  • 1,000 $0.9630
  • 3,000 $0.9140
  • 5,000 $0.8800
$0.8800 / $2.0300 Buy Now
DISTI # 846-R8002KNXC7G-ND
DigiKey 800V 1.6A, TO-220FM, HIGH-SPEED Min Qty: 1 Lead time: 25 Weeks Container: Tube 944
In Stock
  • 1 $1.3700
  • 50 $1.1022
  • 100 $0.9068
  • 500 $0.8188
$0.8188 / $1.3700 Buy Now
DISTI # R8002KNXC7G
Avnet Americas Transistor MOSFET N-Channel 800V 1.6A 3-Pin TO-220FM Tube - Rail/Tube (Alt: R8002KNXC7G) Min Qty: 1000 Package Multiple: 1000 Container: Tube 0
  • 1,000 $0.9694
  • 2,000 $0.9497
  • 4,000 $0.9301
  • 6,000 $0.9104
  • 8,000 $0.8908
  • 10,000 $0.8711
  • 100,000 $0.8515
$0.8515 / $0.9694 Buy Now
DISTI # 755-R8002KNXC7G
Mouser Electronics MOSFET 800V 1.6A TO-220FM PWR MOSFET RoHS: Compliant 996
  • 1 $1.3700
  • 10 $1.1100
  • 100 $0.9070
  • 500 $0.8190
  • 1,000 $0.8180
$0.8180 / $1.3700 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 25 Weeks Container: Tube 0
Tube
  • 1,000 $0.8620
$0.8620 Buy Now
DISTI # 63308988
Verical Trans MOSFET N-CH 800V 1.6A 3-Pin(3+Tab) TO-220FM Tube RoHS: Compliant Min Qty: 27 Package Multiple: 1 Date Code: 2134 Americas - 200
  • 27 $1.1750
  • 50 $1.0913
  • 100 $0.9200
  • 200 $0.8687
$0.8687 / $1.1750 Buy Now
DISTI # 59895141
Verical Trans MOSFET N-CH 800V 1.6A 3-Pin(3+Tab) TO-220FM Tube RoHS: Compliant Min Qty: 44 Package Multiple: 1 Date Code: 2101 Americas - 50
  • 44 $1.7423
  • 50 $1.6759
$1.6759 / $1.7423 Buy Now
Quest Components   40
  • 1 $3.3280
  • 11 $2.0800
  • 37 $1.8304
$1.8304 / $3.3280 Buy Now
DISTI # R8002KNXC7G
TTI MOSFET 800V 1.6A TO-220FM PWR MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 1000 Container: Tube Americas - 0
  • 1,000 $0.8900
  • 2,000 $0.8700
  • 3,000 $0.8500
  • 5,000 $0.8400
  • 10,000 $0.8200
$0.8200 / $0.8900 Buy Now
Ameya Holding Limited   Min Qty: 1 43-Authorized Distributor
  • 1 $2.6165
  • 50 $1.5386
  • 100 $1.3132
  • 500 $1.0780
  • 1,000 $0.8908
  • 2,000 $0.8095
  • 5,000 $0.7811
$0.7811 / $2.6165 Buy Now
DISTI # C1S625902024532
Chip1Stop 800V 1.6A, TO-220FM, High-speed switching Power MOSFET RoHS: Not Compliant pbFree: No Container: Tube 200
  • 1 $1.4000
  • 10 $0.9400
  • 50 $0.8730
  • 100 $0.7360
  • 200 $0.6950
$0.6950 / $1.4000 Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2021 Date Code: 2021 50
  • 1 $2.3120
  • 10 $1.7340
  • 50 $1.1560
  • 100 $0.9250
  • 500 $0.8670
  • 1,000 $0.8320
$0.8320 / $2.3120 Buy Now

Part Details for R8002KNXC7G

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R8002KNXC7G Part Data Attributes:

Parametric Data
R8002KNXC7G ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
R8002KNXC7G ROHM Semiconductor Power Field-Effect Transistor, 1.6A I(D), 800V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FM, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description TO-220FM, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer ROHM Semiconductor
Avalanche Energy Rating (Eas) 4 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 1.6 A
Drain-source On Resistance-Max 4.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 28 W
Pulsed Drain Current-Max (IDM) 4.8 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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