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Transistors / Power Field-Effect Transistors / R8005ANJGTL
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R8005ANJGTL by: ROHM Semiconductor

Power Field-Effect Transistor, 5A I(D), 800V, 2.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, SC-83, D2PAK-3/2

Part Details for R8005ANJGTL by ROHM Semiconductor

Overview of R8005ANJGTL by ROHM Semiconductor

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Price & Stock for R8005ANJGTL

Part # Distributor Description Stock Price Buy
DISTI # 846-R8005ANJGTLCT-ND
DigiKey NCH 800V 5A POWER MOSFET : R8005 Min Qty: 1 Lead time: 28 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 1984
In Stock
  • 1 $3.9600
  • 10 $3.3210
  • 100 $2.6870
  • 500 $2.3884
  • 1,000 $2.0451
  • 2,000 $1.9257
  • 5,000 $1.8475
$1.8475 / $3.9600 Buy Now
DISTI # R8005ANJGTL
Avnet Americas Transistor MOSFET N-Channel 800V 5A 3-Pin TO-263 Emboss T/R - Tape and Reel (Alt: R8005ANJGTL) Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
  • 1,000 $2.1874
  • 2,000 $2.1431
  • 4,000 $2.0988
  • 6,000 $2.0544
  • 8,000 $2.0101
  • 10,000 $1.9657
  • 100,000 $1.9214
$1.9214 / $2.1874 Buy Now
DISTI # 755-R8005ANJGTL
Mouser Electronics MOSFET MOSFET RoHS: Compliant 1992
  • 1 $3.9600
  • 10 $3.3300
  • 25 $3.1400
  • 100 $2.6900
  • 250 $2.5400
  • 500 $2.4000
  • 1,000 $2.0300
  • 2,000 $1.9200
$1.9200 / $3.9600 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
Reel
  • 1,000 $1.9800
$1.9800 Buy Now
Quest Components   480
  • 1 $4.2840
  • 89 $2.6418
  • 380 $2.3562
$2.3562 / $4.2840 Buy Now
DISTI # R8005ANJGTL
TTI MOSFET MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 1000 Container: Reel Americas - 0
Buy Now
DISTI # R8005ANJGTL
Avnet Americas Transistor MOSFET N-Channel 800V 5A 3-Pin TO-263 Emboss T/R - Tape and Reel (Alt: R8005ANJGTL) Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
  • 1,000 $2.1874
  • 2,000 $2.1431
  • 4,000 $2.0988
  • 6,000 $2.0544
  • 8,000 $2.0101
  • 10,000 $1.9657
  • 100,000 $1.9214
$1.9214 / $2.1874 Buy Now
DISTI # R8005ANJGTL
Avnet Americas Transistor MOSFET N-Channel 800V 5A 3-Pin TO-263 Emboss T/R - Tape and Reel (Alt: R8005ANJGTL) Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
  • 1,000 $2.1874
  • 2,000 $2.1431
  • 4,000 $2.0988
  • 6,000 $2.0544
  • 8,000 $2.0101
  • 10,000 $1.9657
  • 100,000 $1.9214
$1.9214 / $2.1874 Buy Now
DISTI # 4202981
Farnell MOSFET, N-CH, 800V, 5A, TO-263 RoHS: Compliant Min Qty: 1000 Lead time: 27 Weeks, 1 Days Container: Cut Tape 0
  • 1,000 $2.0474
$2.0474 Buy Now
DISTI # 4202981RL
Farnell MOSFET, N-CH, 800V, 5A, TO-263 RoHS: Compliant Min Qty: 1000 Lead time: 27 Weeks, 1 Days Container: Reel 0
  • 1,000 $2.0474
$2.0474 Buy Now

Part Details for R8005ANJGTL

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R8005ANJGTL Part Data Attributes

Parametric Data
R8005ANJGTL ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
R8005ANJGTL ROHM Semiconductor Power Field-Effect Transistor, 5A I(D), 800V, 2.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, SC-83, D2PAK-3/2
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant
ECCN Code EAR99
Date Of Intro 2018-11-28
Samacsys Manufacturer ROHM Semiconductor
Avalanche Energy Rating (Eas) 1.66 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 5 A
Drain-source On Resistance-Max 2.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 10 A
Surface Mount YES
Terminal Finish Tin/Copper (Sn/Cu)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for R8005ANJGTL

This table gives cross-reference parts and alternative options found for R8005ANJGTL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of R8005ANJGTL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BFD71 Power Field-Effect Transistor, 5A I(D), 800V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN TT Electronics Resistors R8005ANJGTL vs BFD71
BFD71 5A, 800V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, TO-3, 2 PIN TT Electronics Power and Hybrid / Semelab Limited R8005ANJGTL vs BFD71
2SK2089(2-10S1B) TRANSISTOR 5 A, 800 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220FL, 3 PIN, FET General Purpose Power Toshiba America Electronic Components R8005ANJGTL vs 2SK2089(2-10S1B)
2SK2884(TO-220FL) TRANSISTOR 5 A, 800 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10S1B, TO-220FL, 3 PIN, FET General Purpose Power Toshiba America Electronic Components R8005ANJGTL vs 2SK2884(TO-220FL)
2SK2884(TO-220SM) TRANSISTOR 5 A, 800 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, 2-10S2B, TO-220SM, 3 PIN, FET General Purpose Power Toshiba America Electronic Components R8005ANJGTL vs 2SK2884(TO-220SM)
2SK2089(2-10S2B) TRANSISTOR 5 A, 800 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220SM, 3 PIN, FET General Purpose Power Toshiba America Electronic Components R8005ANJGTL vs 2SK2089(2-10S2B)
STB5NA80-1 4.7A, 800V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, I2PAK-3 STMicroelectronics R8005ANJGTL vs STB5NA80-1
FS5VS-16A-T1 Power Field-Effect Transistor, 5A I(D), 800V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN Mitsubishi Electric R8005ANJGTL vs FS5VS-16A-T1
IRFAE40 Power Field-Effect Transistor, 4.8A I(D), 800V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Infineon Technologies AG R8005ANJGTL vs IRFAE40
FS5VS-16A-T2 Power Field-Effect Transistor, 5A I(D), 800V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN Mitsubishi Electric R8005ANJGTL vs FS5VS-16A-T2

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