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Power Field-Effect Transistor, 10A I(D), 250V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FM, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
RCX100N25-ND
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DigiKey | MOSFET N-CH 250V 10A TO220FM Min Qty: 1 Lead time: 16 Weeks Container: Bulk |
424 In Stock |
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$0.9062 / $1.5200 | Buy Now |
DISTI #
RCX100N25
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Avnet Americas | MOSFET, NCH 250V, 10A TO-220FM - Bulk (Alt: RCX100N25) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Container: Bulk | 0 |
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$0.4953 / $0.5639 | Buy Now |
DISTI #
755-RCX100N25
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Mouser Electronics | MOSFET Nch 250V 10A MOSFET RoHS: Compliant | 397 |
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$0.9060 / $2.1600 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Container: Bulk | 0Bulk |
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$0.5080 | Buy Now |
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Quest Components | 196 |
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$1.3140 / $2.6280 | Buy Now | |
DISTI #
RCX100N25
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Avnet Americas | MOSFET, NCH 250V, 10A TO-220FM - Bulk (Alt: RCX100N25) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Container: Bulk | 0 |
|
$0.4953 / $0.5639 | Buy Now |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2014 Date Code: 2014 | 46 |
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$0.6570 / $0.9990 | Buy Now |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2019 Date Code: 2019 | 200 |
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$0.6570 / $0.9990 | Buy Now |
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RCX100N25
ROHM Semiconductor
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Datasheet
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Compare Parts:
RCX100N25
ROHM Semiconductor
Power Field-Effect Transistor, 10A I(D), 250V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FM, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Avalanche Energy Rating (Eas) | 7.29 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 250 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 0.32 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e1 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Surface Mount | NO | |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |