Part Details for RN1422(TE85L,F) by Toshiba America Electronic Components
Overview of RN1422(TE85L,F) by Toshiba America Electronic Components
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Applications
Consumer Electronics
Industrial Automation
Audio and Video Systems
Energy and Power Systems
Renewable Energy
Price & Stock for RN1422(TE85L,F)
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 2390 |
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$0.2600 / $0.6500 | Buy Now | |
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DISTI #
RN1422TE85LF
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Avnet Americas | Trans Digital BJT NPN 50V 800mA 3-Pin S-Mini T/R - Tape and Reel (Alt: RN1422TE85LF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 40 Weeks, 0 Days Container: Reel | 0 |
|
$0.0798 / $0.1017 | Buy Now |
Part Details for RN1422(TE85L,F)
RN1422(TE85L,F) CAD Models
RN1422(TE85L,F) Part Data Attributes
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RN1422(TE85L,F)
Toshiba America Electronic Components
Buy Now
Datasheet
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RN1422(TE85L,F)
Toshiba America Electronic Components
Small Signal Bipolar Transistor
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.75 | |
| Factory Lead Time | 40 Weeks | |
| Additional Feature | BUILT IN BIAS RESISTOR RATIO 1 | |
| Collector Current-Max (IC) | 0.8 A | |
| Collector-Base Capacitance-Max | 7 pF | |
| Collector-Emitter Voltage-Max | 50 V | |
| Configuration | SINGLE WITH BUILT-IN RESISTOR | |
| DC Current Gain-Min (hFE) | 65 | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 0.2 W | |
| Power Dissipation-Max (Abs) | 0.2 W | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 300 MHz | |
| VCEsat-Max | 0.25 V |