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Transistors / Power Field-Effect Transistors / RQ3E100BNTB
Datasheets
RQ3E100BNTB by: ROHM Semiconductor

Power Field-Effect Transistor, 10A I(D), 30V, 0.0153ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSMT8, 8 PIN

Part Details for RQ3E100BNTB by ROHM Semiconductor

Overview of RQ3E100BNTB by ROHM Semiconductor

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Price & Stock for RQ3E100BNTB

Part # Distributor Description Stock Price Buy
DISTI # RQ3E100BNTBCT-ND
DigiKey MOSFET N-CH 30V 10A 8HSMT Min Qty: 1 Lead time: 21 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 83110
In Stock
  • 1 $0.4100
  • 10 $0.3480
  • 100 $0.2416
  • 500 $0.1886
  • 1,000 $0.1533
  • 3,000 $0.1371
  • 6,000 $0.1301
  • 9,000 $0.1208
  • 30,000 $0.1180
  • 75,000 $0.1150
$0.1150 / $0.4100 Buy Now
DISTI # RQ3E100BNTB
Avnet Americas Trans MOSFET N-CH 30V ±10A 8-Pin HSMT Embossed Tape and Reel - Tape and Reel (Alt: RQ3E100BNTB) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.1343
  • 6,000 $0.1306
  • 12,000 $0.1270
  • 18,000 $0.1233
  • 24,000 $0.1196
  • 30,000 $0.1178
$0.1178 / $0.1343 Buy Now
DISTI # 755-RQ3E100BNTB
Mouser Electronics MOSFET 4.5V Drive Nch MOSFET RoHS: Compliant 114544
  • 1 $0.4100
  • 10 $0.3430
  • 100 $0.2410
  • 500 $0.1890
  • 1,000 $0.1530
  • 3,000 $0.1300
  • 9,000 $0.1200
  • 24,000 $0.1180
  • 45,000 $0.1150
$0.1150 / $0.4100 Buy Now
Future Electronics 30V, 13.5A, 10.4mohm, N-Channel, MIddle Power MOSFET, HSMT8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.1260
  • 6,000 $0.1240
  • 12,000 $0.1220
  • 15,000 $0.1210
  • 45,000 $0.1160
$0.1160 / $0.1260 Buy Now
Quest Components   4531
  • 1 $0.7900
  • 507 $0.3160
  • 2,533 $0.2765
$0.2765 / $0.7900 Buy Now
DISTI # RQ3E100BNTB
TTI MOSFET 4.5V Drive Nch MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 0
  • 3,000 $0.1670
$0.1670 Buy Now
DISTI # RQ3E100BNTB
Avnet Americas Trans MOSFET N-CH 30V ±10A 8-Pin HSMT Embossed Tape and Reel - Tape and Reel (Alt: RQ3E100BNTB) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.1343
  • 6,000 $0.1306
  • 12,000 $0.1270
  • 18,000 $0.1233
  • 24,000 $0.1196
  • 30,000 $0.1178
$0.1178 / $0.1343 Buy Now
DISTI # RQ3E100BNTB
TME Transistor: N-MOSFET, unipolar, 30V, 21A, Idm: 40A, 15W, HSMT8 Min Qty: 3 0
  • 3 $0.2880
  • 25 $0.2190
  • 100 $0.1930
  • 500 $0.1730
  • 3,000 $0.1620
$0.1620 / $0.2880 RFQ
Ameya Holding Limited MOSFET N-CH 30V 10A HSMT8 Min Qty: 1 80-Authorized Distributor
  • 1 $0.4200
  • 10 $0.3620
  • 100 $0.2710
  • 500 $0.2130
  • 1,000 $0.1650
  • 3,000 $0.1490
$0.1490 / $0.4200 Buy Now
DISTI # RQ3E100BNTB
Avnet Americas Trans MOSFET N-CH 30V ±10A 8-Pin HSMT Embossed Tape and Reel - Tape and Reel (Alt: RQ3E100BNTB) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.1343
  • 6,000 $0.1306
  • 12,000 $0.1270
  • 18,000 $0.1233
  • 24,000 $0.1196
  • 30,000 $0.1178
$0.1178 / $0.1343 Buy Now

Part Details for RQ3E100BNTB

RQ3E100BNTB CAD Models

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RQ3E100BNTB Part Data Attributes

Parametric Data
RQ3E100BNTB ROHM Semiconductor
Buy Now Datasheet
Compare Parts:
RQ3E100BNTB ROHM Semiconductor Power Field-Effect Transistor, 10A I(D), 30V, 0.0153ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSMT8, 8 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROHM CO LTD
Package Description HSMT8, 8 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 21 Weeks
Samacsys Manufacturer ROHM Semiconductor
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.0153 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F5
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 40 A
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for RQ3E100BNTB

This table gives cross-reference parts and alternative options found for RQ3E100BNTB. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RQ3E100BNTB, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSZ100N03LSG Power Field-Effect Transistor, 12A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 Infineon Technologies AG RQ3E100BNTB vs BSZ100N03LSG
RQ3E100MNTB1 Power Field-Effect Transistor, 10A I(D), 30V, 0.0168ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSMT8, 8 PIN ROHM Semiconductor RQ3E100BNTB vs RQ3E100MNTB1

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