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Power Field-Effect Transistor,
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
846-RQ3E100BNTB1CT-ND
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DigiKey | NCH 30V 21A POWER MOSFET: RQ3E10 Min Qty: 1 Lead time: 21 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
8642 In Stock |
|
$0.3857 / $1.0300 | Buy Now |
DISTI #
RQ3E100BNTB1
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Avnet Americas | Transistor MOSFET N-Channel 30V 21A 8-Pin HSMT T/R - Tape and Reel (Alt: RQ3E100BNTB1) Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
|
$0.3942 / $0.4497 | Buy Now |
DISTI #
755-RQ3E100BNTB1
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Mouser Electronics | MOSFET N CHAN 30V HSMT8 RoHS: Compliant | 6293 |
|
$0.3930 / $1.0300 | Buy Now |
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Future Electronics | 30V, 21A, 11MOHM, N-CHANNEL, HSMT8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
|
$0.3900 / $0.4100 | Buy Now |
DISTI #
RQ3E100BNTB1
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TTI | MOSFET N CHAN 30V HSMT8 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
|
$0.3850 / $0.4160 | Buy Now |
DISTI #
RQ3E100BNTB1
|
Avnet Americas | Transistor MOSFET N-Channel 30V 21A 8-Pin HSMT T/R - Tape and Reel (Alt: RQ3E100BNTB1) Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
|
$0.3942 / $0.4497 | Buy Now |
|
Ameya Holding Limited | Min Qty: 1 | 2700-Authorized Distributor |
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$0.4520 / $1.0600 | Buy Now |
DISTI #
RQ3E100BNTB1
|
Avnet Americas | Transistor MOSFET N-Channel 30V 21A 8-Pin HSMT T/R - Tape and Reel (Alt: RQ3E100BNTB1) Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
|
$0.3942 / $0.4497 | Buy Now |
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RQ3E100BNTB1
ROHM Semiconductor
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Datasheet
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Compare Parts:
RQ3E100BNTB1
ROHM Semiconductor
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | , | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Avalanche Energy Rating (Eas) | 14 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 0.0153 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 105 pF | |
JESD-30 Code | R-PDSO-F8 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 15 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |