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Part Details for RQ3E150GNTB by ROHM Semiconductor
Overview of RQ3E150GNTB by ROHM Semiconductor
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Security and Surveillance
Environmental Monitoring
Internet of Things (IoT)
Space Technology
Smart Cities
Aerospace and Defense
Healthcare
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Robotics and Drones
Price & Stock for RQ3E150GNTB
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
RQ3E150GNTBCT-ND
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DigiKey | MOSFET N-CH 30V 15A 8HSMT Min Qty: 1 Lead time: 21 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
18680 In Stock |
|
$0.1688 / $0.6000 | Buy Now |
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DISTI #
RQ3E150GNTB
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Avnet Americas | Transistor MOSFET N-CH 30V 39A 8-Pin HSMT Emboss T/R - Tape and Reel (Alt: RQ3E150GNTB) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days Container: Reel | 3000 |
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RFQ | |
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DISTI #
755-RQ3E150GNTB
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Mouser Electronics | MOSFET 4.5V Drive Nch MOSFET RoHS: Compliant | 5048 |
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$0.1730 / $0.5900 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.1800 | Buy Now |
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Quest Components | 2670 |
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$0.3115 / $0.8900 | Buy Now | |
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DISTI #
RQ3E150GNTB
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Avnet Americas | Transistor MOSFET N-CH 30V 39A 8-Pin HSMT Emboss T/R - Tape and Reel (Alt: RQ3E150GNTB) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days Container: Reel | 3000 |
|
RFQ | |
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DISTI #
RQ3E150GNTB
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TME | Transistor: N-MOSFET, unipolar, 30V, 39A, Idm: 60A, 17W, HSMT8 Min Qty: 1 | 0 |
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$0.2790 / $0.8590 | RFQ |
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Ameya Holding Limited | Min Qty: 1 | 90-Authorized Distributor |
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$0.2190 / $0.6100 | Buy Now |
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DISTI #
RQ3E150GNTB
|
Avnet Americas | Transistor MOSFET N-CH 30V 39A 8-Pin HSMT Emboss T/R - Tape and Reel (Alt: RQ3E150GNTB) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days Container: Reel | 3000 |
|
RFQ | |
|
DISTI #
RQ3E150GNTB
|
Avnet Asia | Transistor MOSFET N-CH 30V 39A 8-Pin HSMT Emboss T/R (Alt: RQ3E150GNTB) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days | 0 |
|
RFQ |
Part Details for RQ3E150GNTB
RQ3E150GNTB CAD Models
RQ3E150GNTB Part Data Attributes
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RQ3E150GNTB
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
RQ3E150GNTB
ROHM Semiconductor
Power Field-Effect Transistor, 15A I(D), 30V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSMT8, 8 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROHM CO LTD | |
| Package Description | HSMT8, 8 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 21 Weeks | |
| Samacsys Manufacturer | ROHM Semiconductor | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 15 A | |
| Drain-source On Resistance-Max | 0.0081 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for RQ3E150GNTB
This table gives cross-reference parts and alternative options found for RQ3E150GNTB. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RQ3E150GNTB, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF6617TRPBF | Power Field-Effect Transistor, 14A I(D), 30V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 | Infineon Technologies AG | RQ3E150GNTB vs IRF6617TRPBF |
| IRF6617TR1 | Power Field-Effect Transistor, 14A I(D), 30V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ISOMETRIC-3 | International Rectifier | RQ3E150GNTB vs IRF6617TR1 |
| IRF6617 | Power Field-Effect Transistor, 14A I(D), 30V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 | International Rectifier | RQ3E150GNTB vs IRF6617 |
| IRF6617 | Power Field-Effect Transistor, 14A I(D), 30V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 | Infineon Technologies AG | RQ3E150GNTB vs IRF6617 |
| IRF6617TRPBF | Power Field-Effect Transistor, 14A I(D), 30V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3 | International Rectifier | RQ3E150GNTB vs IRF6617TRPBF |